块状铟的 HAXPES Cr Kα 测量

IF 1.6 Q3 PHYSICS, CONDENSED MATTER

Surface Science Spectra Pub Date : 2023-12-01 DOI:10.1116/6.0003161

C. Zborowski, A. Vanleenhove, I. Hoflijk, I. Vaesen, K. Artyushkova, T. Conard

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引用次数: 0

摘要

利用高分辨率高能 X 射线光电子能谱（HAXPES）对铟进行了分析。使用 5414.8 eV 的单色 Cr Kα 辐射获得的铟 HAXPES 光谱包括铟 2s、铟 2p3/2、铟 3s、铟 3p3/2、铟 3d、铟 4s 和铟 4d 的勘测扫描和高分辨率光谱。

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HAXPES Cr Kα measurement of bulk indium

Indium was analyzed using high-resolution high energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of indium obtained using monochromatic Cr Kα radiation at 5414.8 eV include survey scan and high-resolution spectra of In 2s, In 2p3/2, In 3s, In 3p3/2, In 3d, In 4s, and In 4d.

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来源期刊

Surface Science Spectra PHYSICS, CONDENSED MATTER-

CiteScore

1.90

自引率

7.70%

发文量