评估具有不同离子注入损伤的 InGaN 量子阱中的辐射和非辐射重组寿命

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2023-12-21 DOI:10.35848/1347-4065/acfb18

Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi, S. Kusanagi, Y. Kanitani, Yoshihiro Kudo, S. Tomiya

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引用次数: 0

摘要

在这项研究中，我们分别评估了具有不同离子注入损伤量的 InGaN 量子阱 (QW) 样品的辐射和非辐射重组寿命，并研究了它们的温度依赖性。辐射和非辐射重组寿命是通过时间分辨光致发光测量法测得的光致发光衰减时间，结合光声和光致发光同步测量法估算的绝对内部量子效率值计算得出的。结果表明，实验观测到的辐射重组寿命对所有样品都几乎相同，而离子注入损伤较大的样品的非辐射重组寿命较短。这些发现将有助于全面了解 InGaN-QW 光学器件中的载流子动力学。

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Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage

In this study, we have separately evaluated the radiative and non-radiative recombination lifetimes for InGaN quantum well (QW) samples with different amounts of ion-implantation damage, and have investigated their temperature dependence. The radiative and non-radiative recombination lifetimes were calculated from photoluminescence (PL) decay time measured by time-resolved PL measurements, combined with the absolute internal quantum efficiency values estimated by the simultaneous photoacoustic and PL measurements. As a result, the experimentally observed radiative recombination lifetimes are almost the same for all samples, while the non-radiative recombination lifetimes are shorter for samples with larger ion-implantation damage. These findings will lead to a comprehensive understanding of carrier dynamics in InGaN-QW optical devices.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS