平面和圆柱形铁电隧道结的性能比较

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2023-12-22 DOI:10.35848/1347-4065/ad184e

yirong Guo, Jie Li, Pengying Chang

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引用次数: 0

摘要

基于物理建模和仿真，对平面铁电隧道结（P-FTJ）和圆柱形铁电隧道结（C-FTJ）的电气特性进行了全面比较。FTJ 结构由金属-铁电-介电-金属叠层组成。根据铁电层的位置是靠近还是远离内电极，考虑了 C-FTJ 的两种配置。分析了 P-FTJ 和 C-FTJ 在电场和铁电极化分布方面的差异。探讨了由此产生的隧穿电阻 (TER) 与内半径、铁电厚度、介质厚度和残余极化的函数关系。这些模拟结果为通过提高 TER 比实现高度集成的三维存储结构提供了物理见解。

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Performance comparison of planar and cylindrical ferroelectric tunnel junctions

A comprehensive comparison of the electrical characteristics between the planar (P-FTJ) and cylindrical ferroelectric tunnel junction (C-FTJ) is conducted based on physical modeling and simulation. The FTJ architecture is consisted of metal-ferroelectric-dielectric-metal stacks. Two configurations of C-FTJ are considered depending on whether the position of ferroelectric layer is close or away from the inner electrode. The differences between the P-FTJ and C-FTJs in the distributions of the electric field and ferroelectric polarization are analyzed. The resultant tunneling electroresistance (TER) are explored as a function of the inner radius, ferroelectric thickness, dielectric thickness, and remnant polarization. These simulation results offer physical insights into achieving highly integrated three-dimensional storage structures through improving the TER ratio.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS