用于去除砷(III)离子的纳米二氧化硅-半胱氨酸复合材料的合成与表征。

IF 1.2 4区 化学 Q3 CHEMISTRY, MULTIDISCIPLINARY
Omar Alaa Alnasra, Fawwaz Izzat Khalili
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引用次数: 0

摘要

本文介绍了纳米二氧化硅-半胱氨酸复合材料(SiO2-Cys)的合成及其作为吸附剂从不同水介质中去除砷(III)的应用。应用衰减全反射-傅立叶变换红外光谱、扫描和透射电子显微镜、X 射线衍射和热重分析对 SiO2-Cys 进行了表征。采用批次法研究了 SiO2-Cys 对 As(III) 离子的吸附,并考虑了 pH 值、吸附剂用量、温度、初始浓度和接触时间的影响。根据动力学研究,伪二阶方程充分描述了 As(III)离子的吸附过程。吉布斯自由能 (G°) 的负值表明 SiO2-Cys 上的吸附过程是自发的。焓(ΔH°)的正值表明吸附过程是内热的,而 As(III)离子吸附的熵(ΔS°)的正值意味着吸附的随机性越来越大。在 25°C 时,SiO2-Cys 的最大吸附容量为(66.67 mg/g),而 Langmuir 模型能更好地拟合吸附等温线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis and Characterization of a Nanosilica-Cysteine Composite for Arsenic(III) Ion Removal.

This article describes the synthesis of nanosilica-cysteine composite (SiO2-Cys) and its application as a sorbent for arsenic(III) removal from different aqueous media. Attenuated total reflectance-Fourier-transform infrared spectroscopy, scanning and transmission electron microscopy, X-ray diffraction, and thermogravimetric analysis were applied to characterize SiO2-Cys. Using the batch technique, sorption of As(III) ion by SiO2-Cys was studied, and the effects of pH, sorbent dosage, temperature, initial concentration, and contact time were all taken into consideration. According to kinetic studies, the pseudo-second-order equation adequately described the sorption of the As(III) ion. The spontaneity of the sorption process on SiO2-Cys is suggested by the negative values of Gibbs free energy (G°). Positive values of enthalpy (ΔH°) indicate the endothermic adsorption process and the positive values of entropy (ΔS°) for As(III) ions adsorption imply that the adsorption involves increasing randomness. The Langmuir model, which has a maximum sorption capacity for SiO2-Cys of (66.67 mg/g) at 25°C, provided a better fit to the sorption isotherm.

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来源期刊
Acta Chimica Slovenica
Acta Chimica Slovenica 化学-化学综合
CiteScore
2.50
自引率
25.00%
发文量
80
审稿时长
1.0 months
期刊介绍: Is an international, peer-reviewed and Open Access journal. It provides a forum for the publication of original scientific research in all fields of chemistry and closely related areas. Reviews, feature, scientific and technical articles, and short communications are welcome.
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