A floating memristor emulator for analog and digital applications with experimental results

This paper presented a flux controlled memristor using the most versatile analog block, a single Operational Amplifier (Op-Amp), an N-channel metal–oxide–semiconductor field-effect transistor (MOSFET), and four passive elements. The following benefits are offered by the suggested memristor design: (1) a lesser number of active and passive elements; (2) floating nature of the circuit; (3) wide-operating frequency range (200 Hz–20 kHz); and (4) simple and versatile design. The performance evaluation through simulation of the proposed memristor model including post-layout simulation of silicon components (Op-Amp and NMOS transistor (\(M\))) is verified with Cadence Virtuoso tool using standard CMOS 90 nm technology. In addition, the application of the proposed memristor in the field of analog and digital are also shown in the paper. Furthermore, the proposed circuit verification is also carried out experimentally using off-the-shelf components (IC LM741 and 2N6659) along with passive components.