MOF thin film memristor prototype of 10×10 memory cells for automated electronic data recording

Metal–organic frameworks (MOFs) have recently emerged as a new class of functional materials for opto- and micro-electronic applications. Herein, the transition from laboratory samples of devices to their prototypes remains a challenge. Here we report a prototype of memristive device based on MOF (HKUST-1). The MOF thin film with a thickness of 130 nm and a size of 1 × 1 in. has been fabricated Layer-by-layer technique on a conductive substrate followed by the deposition of top Ag contacts. A fully automated process of applying voltage to write the binary data (at 0.8 ± 0.1 V), read it (by 0.4 V) and then erase (by inverted polarity with 0.4 ± 0.1 V) made it potentially possible to process arbitrary words for at least 10 cycles. The provided prototype, consisting of 10 × 10 memory cells, opens up prospects for real-life application of MOF-based logic elements, as well as reveals the challenges for their fabrication and exploitation.