通过 TMAH 湿法蚀刻有效抑制凹栅极 MIS-HEMT 中的界面态

IF 2.3 4区物理与天体物理 Q3 PHYSICS, APPLIED

Applied Physics Express Pub Date : 2023-12-02 DOI:10.35848/1882-0786/ad1199

Yu Li, Guohao Yu, Heng Wang, Jiaan Zhou, Zheming Wang, Runxian Xing, Shaoqian Lu, An Yang, Bingliang Zhang, Yong Cai, Zhongming Zeng, Baoshun Zhang

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引用次数: 0

摘要

研究了栅极介质沉积前四甲基氢氧化铵(TMAH)处理对嵌入式栅极AlGaN/GaN金属-绝缘体-半导体高电子迁移率晶体管(MIS-HEMTs)性能的影响。采用TMAH湿法蚀刻，获得了0.173 nm的低粗糙度蚀刻表面。MIS异质结构的电容电压特性表明界面状态减小了一个数量级。当温度升高到473 K时，经过处理的miss - hemt的阈值电压位移(ΔVTH)很小，为~-0.53 V。从动态测量来看，与处理后的ΔVTH (~-0.01 V)相比，未经处理的ΔVTH (~-1 V)更严重。

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Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching

The effect of tetramethylammonium hydroxide (TMAH) treatment prior to gate dielectric deposition on the performance of recessed-gate AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) was investigated. By using of TMAH wet etching, low roughness etched surface of 0.173 nm was obtained. The capacitance-voltage characteristics of MIS heterostructures showed the interface states reduced by one order of magnitude. When temperature was increased to 473 K, the treated MIS-HEMTs delivered small threshold voltage shift (ΔVTH) of ~-0.53 V. From the dynamic measurement, ΔVTH obtained without treatment was observed more severely (~-1 V) when compared to the treated one (~-0.01 V).

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来源期刊

Applied Physics Express 物理-物理：应用

CiteScore

4.80

自引率

8.70%

发文量

310

审稿时长

1.2 months

期刊介绍： Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).