用低于和高于隙的光激发分别评估 SiO2/GaN MOS 结构中的界面和氧化物空穴陷阱

IF 2.3 4区物理与天体物理 Q3 PHYSICS, APPLIED

Applied Physics Express Pub Date : 2023-12-04 DOI:10.35848/1882-0786/ad120a

Takuma Kobayashi, Kazuki Tomigahara, M. Nozaki, T. Shimura, Heiji Watanabe

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引用次数: 0

摘要

了解金属氧化物半导体(MOS)结构中的陷阱对于制造高性能、高可靠性的MOS晶体管至关重要。在这项研究中，我们通过光辅助电容电压测量来评估SiO2/GaN MOS结构中的空穴陷阱。利用间隙下和间隙上的光来区分快界面和慢氧化空穴阱的贡献。虽然在氧气中退火可以有效地减少氧化物空穴陷阱，但在界面处仍然存在密度超过1012 cm-2eV-1的空穴陷阱。虽然这些陷阱是供体型的，因此隐藏在n型MOS结构中，但它们可能会损害GaN MOS晶体管的开关性能。

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Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation

Understanding the traps in metal-oxide-semiconductor (MOS) structures is crucial to fabricate MOS transistors with high performance and reliability. In this study, we evaluated the hole traps in SiO2/GaN MOS structures through photo-assisted capacitance-voltage measurements. Below- and above-gap light was used to distinguish between the contributions of fast interface and slow oxide hole traps. While annealing in oxygen is effective in reducing the oxide hole traps, a high density of hole traps exceeding 1012 cm-2eV-1 remains at the interface. Although these traps are donor-type and thus hidden in n-type MOS structures, they could impair the switching performance of GaN MOS transistors.

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来源期刊

Applied Physics Express 物理-物理：应用

CiteScore

4.80

自引率

8.70%

发文量

310

审稿时长

1.2 months

期刊介绍： Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).