基底温度和退火对直流磁控溅射技术沉积的 TiO2-x 薄膜生长的影响

IF 1.6 4区化学 Q4 CHEMISTRY, PHYSICAL

Surface and Interface Analysis Pub Date : 2023-12-10 DOI:10.1002/sia.7274

Swapan Jana, Anil Krishna Debnath, Veerender Putta, Jitendra Bahadur, Jugal Kishor, Anil Kumar Chauhan, Debarati Bhattacharya

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引用次数: 0

摘要

本研究探讨了退火对亚氧化钛（TiO2-x）薄膜的结构、表面形貌和化学结构的影响。在室温（RT）和 200°C 基底温度（ST）下，采用不同的溅射功率（75 W 和 100 W），通过直流磁控溅射在硅基底上生长了 TiO2-x 薄膜。薄膜随后在 300、400 和 500°C 真空条件下退火 1 小时。研究了 ST、退火后和溅射功率对薄膜结晶度、表面形貌和化学状态的影响。凝胶入射 X 射线衍射 (GIXRD) 数据显示，薄膜在 RT 时沉积，甚至在退火后都是无定形的，或表现出非常低的结晶结构。此外，薄膜在 ST 下沉积时显示出结晶性，并在 300°C 退火（ST 下 75 W）后显示出锐钛矿（A）与锐钛矿（R）的混合相。X 射线反射率 (XRR) 数据显示，薄膜的质量密度随退火温度的升高而增加。使用原子力显微镜（AFM）和场发射扫描电子显微镜（FESEM）获得的图像显示，退火后薄膜的表面粗糙度增加。X 射线光电子能谱（XPS）分析表明，薄膜处于亚化学计量状态。分析还表明，所有薄膜中的钛都以 Ti4+ 和 Ti3+ 的形式存在，在 500°C 后退火后，Ti4+ 的比例略有增加。研究结果表明，后退火、ST 和溅射功率都会影响 TiO2-x 薄膜的生长。

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Effect of substrate temperature and annealing on the growth of TiO2-x thin films deposited by using DC-magnetron sputtering technique

In this study, the effect of annealing on the structural, surface morphology and chemical structure of titanium suboxide (TiO_2-x) thin films has been investigated. TiO_2-x films had been grown on Si substrates by DC-magnetron sputtering with different sputter powers (75 and 100 W) at room temperature (RT) and 200°C substrate temperature (ST). The films were subsequently annealed for 1 h at 300, 400 and 500°C in vacuum. The impact of ST, post-annealing and sputter power on crystallinity, surface morphology and chemical state of the films were studied. Grazing incidence X-ray diffraction (GIXRD) data revealed that the films were amorphous or exhibited a very low crystalline structure while deposited at RT and even after annealing. Moreover, the films showed crystallinity while deposited at ST and exhibited an anatase-rutile (A-R) mix phase from anatase (A) annealed at 300°C (75 W at ST). X-ray reflectivity (XRR) data showed that the mass density of the films increased with the annealing temperature. Images obtained using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) revealed that post-annealing increased the surface roughness of the films. X-ray photoelectron spectroscopy (XPS) analysis indicated the films were sub stoichiometric. It was also indicated that Ti was in the form of Ti⁴⁺ and Ti³⁺ states in all films, and the proportion of Ti⁴⁺ slightly increased after post-annealing at 500°C. The findings showed that post-annealing, ST and sputtering power can all affect the growth of TiO_2-x films.

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来源期刊

Surface and Interface Analysis 化学-物理化学

CiteScore

3.30

自引率

5.90%

发文量

130

审稿时长

4.4 months

期刊介绍： Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).