{"title":"基底温度和退火对直流磁控溅射技术沉积的 TiO2-x 薄膜生长的影响","authors":"Swapan Jana, Anil Krishna Debnath, Veerender Putta, Jitendra Bahadur, Jugal Kishor, Anil Kumar Chauhan, Debarati Bhattacharya","doi":"10.1002/sia.7274","DOIUrl":null,"url":null,"abstract":"In this study, the effect of annealing on the structural, surface morphology and chemical structure of titanium suboxide (TiO<sub>2-x</sub>) thin films has been investigated. TiO<sub>2-x</sub> films had been grown on Si substrates by DC-magnetron sputtering with different sputter powers (75 and 100 W) at room temperature (RT) and 200°C substrate temperature (ST). The films were subsequently annealed for 1 h at 300, 400 and 500°C in vacuum. The impact of ST, post-annealing and sputter power on crystallinity, surface morphology and chemical state of the films were studied. Grazing incidence X-ray diffraction (GIXRD) data revealed that the films were amorphous or exhibited a very low crystalline structure while deposited at RT and even after annealing. Moreover, the films showed crystallinity while deposited at ST and exhibited an anatase-rutile (A-R) mix phase from anatase (A) annealed at 300°C (75 W at ST). X-ray reflectivity (XRR) data showed that the mass density of the films increased with the annealing temperature. Images obtained using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) revealed that post-annealing increased the surface roughness of the films. X-ray photoelectron spectroscopy (XPS) analysis indicated the films were sub stoichiometric. It was also indicated that Ti was in the form of Ti<sup>4+</sup> and Ti<sup>3+</sup> states in all films, and the proportion of Ti<sup>4+</sup> slightly increased after post-annealing at 500°C. The findings showed that post-annealing, ST and sputtering power can all affect the growth of TiO<sub>2-x</sub> films.","PeriodicalId":22062,"journal":{"name":"Surface and Interface Analysis","volume":"19 1","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2023-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of substrate temperature and annealing on the growth of TiO2-x thin films deposited by using DC-magnetron sputtering technique\",\"authors\":\"Swapan Jana, Anil Krishna Debnath, Veerender Putta, Jitendra Bahadur, Jugal Kishor, Anil Kumar Chauhan, Debarati Bhattacharya\",\"doi\":\"10.1002/sia.7274\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, the effect of annealing on the structural, surface morphology and chemical structure of titanium suboxide (TiO<sub>2-x</sub>) thin films has been investigated. TiO<sub>2-x</sub> films had been grown on Si substrates by DC-magnetron sputtering with different sputter powers (75 and 100 W) at room temperature (RT) and 200°C substrate temperature (ST). The films were subsequently annealed for 1 h at 300, 400 and 500°C in vacuum. The impact of ST, post-annealing and sputter power on crystallinity, surface morphology and chemical state of the films were studied. Grazing incidence X-ray diffraction (GIXRD) data revealed that the films were amorphous or exhibited a very low crystalline structure while deposited at RT and even after annealing. Moreover, the films showed crystallinity while deposited at ST and exhibited an anatase-rutile (A-R) mix phase from anatase (A) annealed at 300°C (75 W at ST). X-ray reflectivity (XRR) data showed that the mass density of the films increased with the annealing temperature. Images obtained using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) revealed that post-annealing increased the surface roughness of the films. X-ray photoelectron spectroscopy (XPS) analysis indicated the films were sub stoichiometric. It was also indicated that Ti was in the form of Ti<sup>4+</sup> and Ti<sup>3+</sup> states in all films, and the proportion of Ti<sup>4+</sup> slightly increased after post-annealing at 500°C. The findings showed that post-annealing, ST and sputtering power can all affect the growth of TiO<sub>2-x</sub> films.\",\"PeriodicalId\":22062,\"journal\":{\"name\":\"Surface and Interface Analysis\",\"volume\":\"19 1\",\"pages\":\"\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2023-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Surface and Interface Analysis\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://doi.org/10.1002/sia.7274\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface and Interface Analysis","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1002/sia.7274","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Effect of substrate temperature and annealing on the growth of TiO2-x thin films deposited by using DC-magnetron sputtering technique
In this study, the effect of annealing on the structural, surface morphology and chemical structure of titanium suboxide (TiO2-x) thin films has been investigated. TiO2-x films had been grown on Si substrates by DC-magnetron sputtering with different sputter powers (75 and 100 W) at room temperature (RT) and 200°C substrate temperature (ST). The films were subsequently annealed for 1 h at 300, 400 and 500°C in vacuum. The impact of ST, post-annealing and sputter power on crystallinity, surface morphology and chemical state of the films were studied. Grazing incidence X-ray diffraction (GIXRD) data revealed that the films were amorphous or exhibited a very low crystalline structure while deposited at RT and even after annealing. Moreover, the films showed crystallinity while deposited at ST and exhibited an anatase-rutile (A-R) mix phase from anatase (A) annealed at 300°C (75 W at ST). X-ray reflectivity (XRR) data showed that the mass density of the films increased with the annealing temperature. Images obtained using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) revealed that post-annealing increased the surface roughness of the films. X-ray photoelectron spectroscopy (XPS) analysis indicated the films were sub stoichiometric. It was also indicated that Ti was in the form of Ti4+ and Ti3+ states in all films, and the proportion of Ti4+ slightly increased after post-annealing at 500°C. The findings showed that post-annealing, ST and sputtering power can all affect the growth of TiO2-x films.
期刊介绍:
Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).