二维铬基铬化物材料和异质结的制备与物理性质研究进展

IF 6.5 2区 物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY
Xiulian Fan, Ruifeng Xin, Li Li, Bo Zhang, Cheng Li, Xilong Zhou, Huanzhi Chen, Hongyan Zhang, Fangping OuYang, Yu Zhou
{"title":"二维铬基铬化物材料和异质结的制备与物理性质研究进展","authors":"Xiulian Fan,&nbsp;Ruifeng Xin,&nbsp;Li Li,&nbsp;Bo Zhang,&nbsp;Cheng Li,&nbsp;Xilong Zhou,&nbsp;Huanzhi Chen,&nbsp;Hongyan Zhang,&nbsp;Fangping OuYang,&nbsp;Yu Zhou","doi":"10.1007/s11467-023-1342-y","DOIUrl":null,"url":null,"abstract":"<div><p>Two-dimensional transition metal dichalcogenides (TMDs) exhibit promising application prospects in the domains of electronic devices, optoelectronic devices and spintronic devices due to their distinctive energy band structures and spin-orbit coupling properties. Cr-based chalcogenides with narrow or even zero bandgap, covering from semiconductors to metallic materials, have considerable potential for wide-band photodetection and two-dimensional magnetism. Currently, the preparation of 2D CrX<sub><i>n</i></sub> (X = S, Se, Te) nanosheets primarily relies on chemical vapor deposition (CVD) and molecule beam epitaxy (MBE), which enable the production of high-quality large-area materials. This review article focuses on recent progress of 2D Cr-based chalcogenides, including unique crystal structure of the CrX<sub><i>n</i></sub> system, phase-controlled synthesis, and heterojunction construction. Furthermore, a detailed introduction of room-temperature ferromagnetism and electrical/optoelectronic properties of 2D CrX<sub><i>n</i></sub> is presented. Ultimately, this paper summarizes the challenges associated with utilizing 2D Cr-based chalcogenides in preparation strategies, optoelectronics devices, and spintronic devices while providing further insights.</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":null,"pages":null},"PeriodicalIF":6.5000,"publicationDate":"2023-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions\",\"authors\":\"Xiulian Fan,&nbsp;Ruifeng Xin,&nbsp;Li Li,&nbsp;Bo Zhang,&nbsp;Cheng Li,&nbsp;Xilong Zhou,&nbsp;Huanzhi Chen,&nbsp;Hongyan Zhang,&nbsp;Fangping OuYang,&nbsp;Yu Zhou\",\"doi\":\"10.1007/s11467-023-1342-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Two-dimensional transition metal dichalcogenides (TMDs) exhibit promising application prospects in the domains of electronic devices, optoelectronic devices and spintronic devices due to their distinctive energy band structures and spin-orbit coupling properties. Cr-based chalcogenides with narrow or even zero bandgap, covering from semiconductors to metallic materials, have considerable potential for wide-band photodetection and two-dimensional magnetism. Currently, the preparation of 2D CrX<sub><i>n</i></sub> (X = S, Se, Te) nanosheets primarily relies on chemical vapor deposition (CVD) and molecule beam epitaxy (MBE), which enable the production of high-quality large-area materials. This review article focuses on recent progress of 2D Cr-based chalcogenides, including unique crystal structure of the CrX<sub><i>n</i></sub> system, phase-controlled synthesis, and heterojunction construction. Furthermore, a detailed introduction of room-temperature ferromagnetism and electrical/optoelectronic properties of 2D CrX<sub><i>n</i></sub> is presented. Ultimately, this paper summarizes the challenges associated with utilizing 2D Cr-based chalcogenides in preparation strategies, optoelectronics devices, and spintronic devices while providing further insights.</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":573,\"journal\":{\"name\":\"Frontiers of Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":6.5000,\"publicationDate\":\"2023-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Frontiers of Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11467-023-1342-y\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Frontiers of Physics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11467-023-1342-y","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

二维过渡金属二掺杂物(TMDs)因其独特的能带结构和自旋轨道耦合特性,在电子器件、光电器件和自旋电子器件领域展现出广阔的应用前景。从半导体到金属材料,具有窄带隙甚至零带隙的铬基掺杂物在宽带光探测和二维磁学方面具有相当大的潜力。目前,二维 CrXn(X = S、Se、Te)纳米片的制备主要依赖于化学气相沉积(CVD)和分子束外延(MBE),这两种方法可以生产出高质量的大面积材料。这篇综述文章重点介绍了二维铬基铬化物的最新进展,包括 CrXn 系统的独特晶体结构、相控合成和异质结构建。此外,还详细介绍了二维 CrXn 的室温铁磁性和电学/光电特性。最后,本文总结了在制备策略、光电器件和自旋电子器件中利用二维铬基铬化物所面临的挑战,并提出了进一步的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions

Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions

Two-dimensional transition metal dichalcogenides (TMDs) exhibit promising application prospects in the domains of electronic devices, optoelectronic devices and spintronic devices due to their distinctive energy band structures and spin-orbit coupling properties. Cr-based chalcogenides with narrow or even zero bandgap, covering from semiconductors to metallic materials, have considerable potential for wide-band photodetection and two-dimensional magnetism. Currently, the preparation of 2D CrXn (X = S, Se, Te) nanosheets primarily relies on chemical vapor deposition (CVD) and molecule beam epitaxy (MBE), which enable the production of high-quality large-area materials. This review article focuses on recent progress of 2D Cr-based chalcogenides, including unique crystal structure of the CrXn system, phase-controlled synthesis, and heterojunction construction. Furthermore, a detailed introduction of room-temperature ferromagnetism and electrical/optoelectronic properties of 2D CrXn is presented. Ultimately, this paper summarizes the challenges associated with utilizing 2D Cr-based chalcogenides in preparation strategies, optoelectronics devices, and spintronic devices while providing further insights.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Frontiers of Physics
Frontiers of Physics PHYSICS, MULTIDISCIPLINARY-
CiteScore
9.20
自引率
9.30%
发文量
898
审稿时长
6-12 weeks
期刊介绍: Frontiers of Physics is an international peer-reviewed journal dedicated to showcasing the latest advancements and significant progress in various research areas within the field of physics. The journal's scope is broad, covering a range of topics that include: Quantum computation and quantum information Atomic, molecular, and optical physics Condensed matter physics, material sciences, and interdisciplinary research Particle, nuclear physics, astrophysics, and cosmology The journal's mission is to highlight frontier achievements, hot topics, and cross-disciplinary points in physics, facilitating communication and idea exchange among physicists both in China and internationally. It serves as a platform for researchers to share their findings and insights, fostering collaboration and innovation across different areas of physics.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信