UiO-66金属-有机骨架单晶的记忆行为

IF 2.5 3区 物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Semyon V. Bachinin , Anastasia Lubimova , Svyatoslav A. Povarov , Dmitrii Zubok , Elizaveta Okoneshnikova , Alena N. Kulakova , Sergey S. Rzhevskiy , Valentin A. Milichko
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引用次数: 0

摘要

金属有机框架(mof)是近年来出现的一类新型可扩展和低能耗的微电子应用材料。在这里,我们通过实验扩展了具有记忆行为的mof列表,用于电子数据存储。使用15µm的UiO-66单晶位于Au触点之间10µm的间隙中,我们演示了在正常条件下电场强度为15 kV cm−1的电子设置/复位过程。这种低能量的数据记录以及超过7个设置/重置周期的持久时间为基于mof的电子和光电器件的设计开辟了前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Memristive behavior of UiO-66 metal-organic framework single crystal

Metal–organic frameworks (MOFs) have recently emerged as a new class of scalable and low energy consumptive materials for microelectronic applications. Here, we experimentally extend the list of MOFs with memristive behavior for electronic data storage. Using 15 µm single crystals of UiO-66 located in 10 µm gap between Au contacts, we demonstrate an electronic set/reset process upon 15 kV cm−1 of an electric field strength under normal conditions. Such low-energy data recording together with an endurance of more than 7 cycles for set/reset opens up prospects for the design of MOF-based electronic and opto-electronic devices.

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来源期刊
CiteScore
5.00
自引率
3.70%
发文量
77
审稿时长
62 days
期刊介绍: This journal establishes a dedicated channel for physicists, material scientists, chemists, engineers and computer scientists who are interested in photonics and nanostructures, and especially in research related to photonic crystals, photonic band gaps and metamaterials. The Journal sheds light on the latest developments in this growing field of science that will see the emergence of faster telecommunications and ultimately computers that use light instead of electrons to connect components.
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