具有低噪声和高温度稳定性的InGaAs/AlInAsSb雪崩光电二极管

IF 5.4 1区物理与天体物理 Q1 OPTICS

APL Photonics Pub Date : 2023-11-27 DOI:10.1063/5.0168134

Bingtian Guo, Mariah Schwartz, Sri H. Kodati, Kyle M. McNicholas, Hyemin Jung, Seunghyun Lee, Jason Konowitch, Dekang Chen, Junwu Bai, Xiangwen Guo, Theodore J. Ronningen, Christoph H. Grein, Joe C. Campbell, Sanjay Krishna

{"title":"具有低噪声和高温度稳定性的InGaAs/AlInAsSb雪崩光电二极管","authors":"Bingtian Guo, Mariah Schwartz, Sri H. Kodati, Kyle M. McNicholas, Hyemin Jung, Seunghyun Lee, Jason Konowitch, Dekang Chen, Junwu Bai, Xiangwen Guo, Theodore J. Ronningen, Christoph H. Grein, Joe C. Campbell, Sanjay Krishna","doi":"10.1063/5.0168134","DOIUrl":null,"url":null,"abstract":"High-sensitivity avalanche photodiodes (APDs) are used to amplify weak optical signals in a wide range of applications, including telecommunications, data centers, spectroscopy, imaging, light detection and ranging, medical diagnostics, and quantum applications. This paper reports antimony-based separate absorption, charge, and multiplication structure APDs on InP substrates. Al0.7In0.3As0.79Sb0.21 is used for the multiplier region, and InGaAs is used as the absorber. The excess noise is comparable to that of silicon APDs; the k-value is more than one order of magnitude lower than that of APDs that use InP or InAlAs for the gain region. The external quantum efficiency without an anti-reflection coating at 1550 nm is 57%. The gradient of the temperature coefficient of avalanche breakdown voltage is 6.7 mV/K/μm, which is less than one-sixth that of InP APDs, presenting the potential to reduce the cost and complexity of receiver circuits. Semi-insulating InP substrates make high-speed operation practical for widely reported AlxIn1−xAsySb1−y-based APDs.","PeriodicalId":8198,"journal":{"name":"APL Photonics","volume":"47 4","pages":""},"PeriodicalIF":5.4000,"publicationDate":"2023-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InGaAs/AlInAsSb avalanche photodiodes with low noise and strong temperature stability\",\"authors\":\"Bingtian Guo, Mariah Schwartz, Sri H. Kodati, Kyle M. McNicholas, Hyemin Jung, Seunghyun Lee, Jason Konowitch, Dekang Chen, Junwu Bai, Xiangwen Guo, Theodore J. Ronningen, Christoph H. Grein, Joe C. Campbell, Sanjay Krishna\",\"doi\":\"10.1063/5.0168134\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-sensitivity avalanche photodiodes (APDs) are used to amplify weak optical signals in a wide range of applications, including telecommunications, data centers, spectroscopy, imaging, light detection and ranging, medical diagnostics, and quantum applications. This paper reports antimony-based separate absorption, charge, and multiplication structure APDs on InP substrates. Al0.7In0.3As0.79Sb0.21 is used for the multiplier region, and InGaAs is used as the absorber. The excess noise is comparable to that of silicon APDs; the k-value is more than one order of magnitude lower than that of APDs that use InP or InAlAs for the gain region. The external quantum efficiency without an anti-reflection coating at 1550 nm is 57%. The gradient of the temperature coefficient of avalanche breakdown voltage is 6.7 mV/K/μm, which is less than one-sixth that of InP APDs, presenting the potential to reduce the cost and complexity of receiver circuits. Semi-insulating InP substrates make high-speed operation practical for widely reported AlxIn1−xAsySb1−y-based APDs.\",\"PeriodicalId\":8198,\"journal\":{\"name\":\"APL Photonics\",\"volume\":\"47 4\",\"pages\":\"\"},\"PeriodicalIF\":5.4000,\"publicationDate\":\"2023-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"APL Photonics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0168134\",\"RegionNum\":1,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"APL Photonics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0168134","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}

引用次数: 0

摘要

高灵敏度雪崩光电二极管(apd)在广泛的应用中用于放大弱光信号，包括电信、数据中心、光谱学、成像、光探测和测距、医疗诊断和量子应用。本文报道了基于锑的铟磷衬底上的分离吸收、电荷和倍增结构apd。乘法器用Al0.7In0.3As0.79Sb0.21，吸收体用InGaAs。多余噪声与硅apd相当;k值比使用InP或InAlAs作为增益区域的apd的k值低一个数量级以上。在1550 nm处，无增透涂层的外量子效率为57%。雪崩击穿电压温度系数的梯度为6.7 mV/K/μm，小于InP apd的六分之一，具有降低接收电路成本和复杂性的潜力。半绝缘InP衬底使得基于AlxIn1−xAsySb1−的apd实现高速运行。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

InGaAs/AlInAsSb avalanche photodiodes with low noise and strong temperature stability

High-sensitivity avalanche photodiodes (APDs) are used to amplify weak optical signals in a wide range of applications, including telecommunications, data centers, spectroscopy, imaging, light detection and ranging, medical diagnostics, and quantum applications. This paper reports antimony-based separate absorption, charge, and multiplication structure APDs on InP substrates. Al0.7In0.3As0.79Sb0.21 is used for the multiplier region, and InGaAs is used as the absorber. The excess noise is comparable to that of silicon APDs; the k-value is more than one order of magnitude lower than that of APDs that use InP or InAlAs for the gain region. The external quantum efficiency without an anti-reflection coating at 1550 nm is 57%. The gradient of the temperature coefficient of avalanche breakdown voltage is 6.7 mV/K/μm, which is less than one-sixth that of InP APDs, presenting the potential to reduce the cost and complexity of receiver circuits. Semi-insulating InP substrates make high-speed operation practical for widely reported AlxIn1−xAsySb1−y-based APDs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

APL Photonics Physics and Astronomy-Atomic and Molecular Physics, and Optics

CiteScore

10.30

自引率

3.60%

发文量

107

审稿时长

19 weeks

期刊介绍： APL Photonics is the new dedicated home for open access multidisciplinary research from and for the photonics community. The journal publishes fundamental and applied results that significantly advance the knowledge in photonics across physics, chemistry, biology and materials science.