高速、低功耗、高效率的5T4M忆阻器型三元内容可寻址存储器

IF 2.5 4区计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IETE Technical Review Pub Date : 2023-11-16 DOI:10.1080/02564602.2023.2279155

Md Hasan Maruf, Syed Iftekhar Ali

引用次数: 0

摘要

研究人员目前正在强调基于忆阻器的存储器设计的发展，以解决基于mosfet的设计所带来的挑战。本文提出了一种基于忆阻器的三元电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-Speed, Low-Power, and Area-Efficient 5T4M Memristor-Based Ternary Content Addressable Memory

Researchers are currently emphasizing the development of memory design based on memristors as a solution to the challenges posed by MOSFET-based designs. In this paper, a memristor-based ternary co...

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来源期刊

IETE Technical Review 工程技术-电信学

CiteScore

5.70

自引率

4.20%

发文量

审稿时长

9 months

期刊介绍： IETE Technical Review is a world leading journal which publishes state-of-the-art review papers and in-depth tutorial papers on current and futuristic technologies in the area of electronics and telecommunications engineering. We also publish original research papers which demonstrate significant advances.