商用GaAs工艺中的120 GHz微带功率放大器mmic

IF 1.4 4区计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Microwave and Wireless Technologies Pub Date : 2023-11-21 DOI:10.1017/s1759078723001216

Simon J. Mahon, MacCrae G. McCulloch, Jakov Mihaljevic, Melissa C. Gorman, Anthony E. Parker, Michael C. Heimlich

{"title":"商用GaAs工艺中的120 GHz微带功率放大器mmic","authors":"Simon J. Mahon, MacCrae G. McCulloch, Jakov Mihaljevic, Melissa C. Gorman, Anthony E. Parker, Michael C. Heimlich","doi":"10.1017/s1759078723001216","DOIUrl":null,"url":null,"abstract":"Single-ended and balanced 90–120 GHz microstrip power amplifier MMICs have been designed for cost-sensitive 5G and 6G backhaul in a commercial 6-inch, 0.1-µm GaAs process. At 108 GHz, measured output power is 20.4 and 22.5 dBm, respectively. At 120 GHz, measured output is 12.6 and 17.4 dBm, respectively. This is the highest reported for GaAs, among the highest reported to date for microstrip MMIC amplifiers at these frequencies and competitive with more expensive InP and GaN processes. Measurement is compared with simulation.","PeriodicalId":49052,"journal":{"name":"International Journal of Microwave and Wireless Technologies","volume":"209 2","pages":""},"PeriodicalIF":1.4000,"publicationDate":"2023-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"120 GHz microstrip power amplifier MMICs in a commercial GaAs process\",\"authors\":\"Simon J. Mahon, MacCrae G. McCulloch, Jakov Mihaljevic, Melissa C. Gorman, Anthony E. Parker, Michael C. Heimlich\",\"doi\":\"10.1017/s1759078723001216\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single-ended and balanced 90–120 GHz microstrip power amplifier MMICs have been designed for cost-sensitive 5G and 6G backhaul in a commercial 6-inch, 0.1-µm GaAs process. At 108 GHz, measured output power is 20.4 and 22.5 dBm, respectively. At 120 GHz, measured output is 12.6 and 17.4 dBm, respectively. This is the highest reported for GaAs, among the highest reported to date for microstrip MMIC amplifiers at these frequencies and competitive with more expensive InP and GaN processes. Measurement is compared with simulation.\",\"PeriodicalId\":49052,\"journal\":{\"name\":\"International Journal of Microwave and Wireless Technologies\",\"volume\":\"209 2\",\"pages\":\"\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2023-11-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Microwave and Wireless Technologies\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://doi.org/10.1017/s1759078723001216\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Microwave and Wireless Technologies","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1017/s1759078723001216","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

单端平衡90-120 GHz微带功率放大器mmic已设计用于成本敏感的5G和6G回程，采用商用6英寸，0.1µm GaAs工艺。在108 GHz时，测量输出功率分别为20.4和22.5 dBm。在120 GHz时，测量输出分别为12.6和17.4 dBm。这是GaAs的最高报道，是迄今为止这些频率下微带MMIC放大器的最高报道，与更昂贵的InP和GaN工艺竞争。测量结果与仿真结果进行了比较。

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120 GHz microstrip power amplifier MMICs in a commercial GaAs process

Single-ended and balanced 90–120 GHz microstrip power amplifier MMICs have been designed for cost-sensitive 5G and 6G backhaul in a commercial 6-inch, 0.1-µm GaAs process. At 108 GHz, measured output power is 20.4 and 22.5 dBm, respectively. At 120 GHz, measured output is 12.6 and 17.4 dBm, respectively. This is the highest reported for GaAs, among the highest reported to date for microstrip MMIC amplifiers at these frequencies and competitive with more expensive InP and GaN processes. Measurement is compared with simulation.

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来源期刊

International Journal of Microwave and Wireless Technologies ENGINEERING, ELECTRICAL & ELECTRONIC-TELECOMMUNICATIONS

CiteScore

3.50

自引率

7.10%

发文量

130

审稿时长

6-12 weeks

期刊介绍： The prime objective of the International Journal of Microwave and Wireless Technologies is to enhance the communication between microwave engineers throughout the world. It is therefore interdisciplinary and application oriented, providing a platform for the microwave industry. Coverage includes: applied electromagnetic field theory (antennas, transmission lines and waveguides), components (passive structures and semiconductor device technologies), analogue and mixed-signal circuits, systems, optical-microwave interactions, electromagnetic compatibility, industrial applications, biological effects and medical applications.