Santiago S. Pérez, Alessandro Bedoya, Luis Miguel Prócel, Ramiro Taco
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Exploiting TFET-based technology for energy-efficient STT-MRAM cells
Spin-transfer torque magnetic random-access memory (STT-MRAM) has been demonstrated to be a leading candidate for on-chip memory technology. In this work, double-barrier magnetic tunnel junction (DMTJ) is exploited to define STT-MRAMs at the circuit-level (i.e. at the bitcell level). The DMTJ-basedbitcells are built from tunnel-FET technology and benchmarked against a calibrated 10 nm-FinFET technology model. STT-MRAM bitcells operate in the ultra-low voltage domain, and are evaluated in terms of energy-efficiency and area. Simulation results points out that the tunnel-FET based solution is the most energy-efficient alternative, in terms of energy-delay-product (EDP), when evaluated at the 6𝜎 corner. Quantitatively, when compared against the FinFET-based design, the TFET-based bitcell exhibits 58% lower EDP, 40% better delay and 34% reduced writing energy. Finally, a leakage analysis was also carried out, showing that TFET-based STT-MRAM bitcells have lower leakage current as compared to the FinFET-based counterpart.
期刊介绍:
The aim of the International Journal of Applied Electromagnetics and Mechanics is to contribute to intersciences coupling applied electromagnetics, mechanics and materials. The journal also intends to stimulate the further development of current technology in industry. The main subjects covered by the journal are:
Physics and mechanics of electromagnetic materials and devices
Computational electromagnetics in materials and devices
Applications of electromagnetic fields and materials
The three interrelated key subjects – electromagnetics, mechanics and materials - include the following aspects: electromagnetic NDE, electromagnetic machines and devices, electromagnetic materials and structures, electromagnetic fluids, magnetoelastic effects and magnetosolid mechanics, magnetic levitations, electromagnetic propulsion, bioelectromagnetics, and inverse problems in electromagnetics.
The editorial policy is to combine information and experience from both the latest high technology fields and as well as the well-established technologies within applied electromagnetics.