柱纹波对超结mosfet反向恢复的影响

Power electronic devices and components Pub Date : 2022-06-01 DOI:10.1016/j.pedc.2022.100009

H. Kang , N. Donato , F. Udrea

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引用次数: 0

摘要

快速的dI/dt和振荡往往是导致超结mosfet反向恢复失效的原因。这些问题变得更加突出，缩小的间距尺寸的超结，试图提高整体性能从一代到下一代。本研究提出了一种可能的解决方案，通过控制柱的纹波来处理体二极管的脆性。在反向传导过程中，比较了具有不同纹波的不同超结器件，以了解纹波对反向恢复特性的影响，特别是对二极管体柔软度的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction MOSFETs

Fast dI/dt and oscillations often are the causes of failure during the reverse-recovery of superjunction MOSFETs. These issues become more prominent with shrinking the pitch size of the superjunction in an attempt to improve the overall performance from one generation to the next. This study suggests a possible solution to deal with the snappiness of the body diode by controlling the pillar's ripple. Different superjunction devices having different ripples, are compared during the reverse conduction to understand the effect of the ripple on the reverse recovery characteristics and in particular on the body diode softness.

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来源期刊

Power electronic devices and components Hardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality

CiteScore

2.00

自引率

0.00%

发文量

审稿时长

80 days