用浓氩离子束铣削Xe等离子体FIB制备相变存储器件平面透射电镜样品的精确最终减薄

C.S. Bonifacio, M.L. Ray, P.E. Fischione, Y. Yu, M. Skowronski
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引用次数: 0

摘要

随着相变存储器(PCM)器件的发展,先进的存储技术受到了广泛的需求。为了成功地通过透射电子显微镜(TEM)进行故障分析和设备开发,精确和可控的TEM样品减薄是至关重要的。在这项工作中,使用Xe等离子体聚焦离子束(pFIB)制备了部分SET状态下的gete基PCM器件的TEM样品,并使用Ar离子束研磨抛光至电子透明。我们将重点介绍Ga聚焦离子束(FIB)和Xe pFIB TEM样品制备的差异,pFIB后Ar离子束铣削的好处,并展示部分SET编程对GeTe PCM器件影响的TEM结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Precise Final Thinning by Concentrated Ar Ion Beam Milling of Plan View TEM Specimens from Phase Change Memory Device Prepared in Xe Plasma FIB
Abstract Advanced memory technologies are in demand with phase change memory (PCM) devices as a forefront candidate. For successful characterization by transmission electron microscopy (TEM) for failure analysis and device development, an accurate and controllable thinning of TEM specimens is critical. In this work, TEM specimens from a GeTe-based PCM device at a partial SET state were prepared using a Xe plasma focused ion beam (pFIB) and polished to electron transparency using Ar ion beam milling. We will highlight the differences between Ga focused ion beam (FIB) and Xe pFIB TEM specimen preparation, the benefits of post-pFIB Ar ion beam milling, and show TEM results of the effects of partial SET programming of the GeTe PCM device.
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