单比特SRAM故障案例研究

Yuyan Wang, Albert Gleason, James Fox, Usha Bhimavarapu, Juan Ortiz, Huan Dang
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引用次数: 0

摘要

静态随机存取存储器(SRAM)是一种对集成密度和工艺变化的可靠性要求最高的器件。在这项研究中,我们关注的是单比特单元SRAM故障。这些故障可分为硬位单元故障和软位单元故障。硬位单元故障是指在较高或较低的电源电压下,位单元无法进行读或写操作。软位单元故障是指在较高或较低的电压下发生故障。SRAM软失效分析进一步分为VBOX高失效和VBOX低失效,这取决于故障模式供电电压。随着晶体管尺寸的不断缩小,SRAM的误差分析由于其体积小而带来了巨大的挑战。本文描述了解决SRAM成品率损失问题的彻底失效分析程序。采用不同的分析技术,包括纳米探针、聚焦离子束(FIB)横截面、扫描扩散电阻显微镜(SSRM)、透射电子显微镜(TEM)、电子能量损失光谱(EELS)、扫描电容显微镜(SCM)和染色蚀刻,以缩小故障的最终根本原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single Bit SRAM Failure Case Study
Abstract Static random-access memory (SRAM) is a type of device that requires the highest reliability demands for integration density and process variations. In this study, we focus on single bit cell SRAM failures. These failures can be categorized as Hard bit cell failure, where bit cells fail the read or write operation under both higher and lower supply voltages, and Soft Bit cell failure, where failures occur at either higher or lower voltage. The analysis on SRAM Soft failure is further divided as VBOX High and VBOX Low failure, which depends on the failure mode supply voltage. With transistor dimensions continuously shrinking, the analysis of SRAM errors imposes tremendous challenges due to their small footprint. In this paper, a thorough failure analysis procedure is described for solving an SRAM yield loss issue. Different analysis techniques were applied and compared to narrow down the failure to the final root cause, including nanoprobing, Focus Ion Beam (FIB) cross-section, Scanning Spreading Resistance Microscopy (SSRM), Transmission Electron Microscopy (TEM), Electron Energy Loss Spectroscopy (EELS), Scanning Capacitance Microscopy (SCM), and stain etch.
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