四碘化锡与臭氧原子层沉积法生长氧化锡薄膜的性质

IF 2.6 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Beilstein Journal of Nanotechnology Pub Date : 2023-11-13 DOI:10.3762/bjnano.14.89

Kristjan Kalam, Peeter Ritslaid, Tanel Käämbre, Aile Tamm, Kaupo Kukli

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引用次数: 0

摘要

采用原子层沉积法(ALD)在sio2 /Si(100)衬底上生长了多晶sno2薄膜。确定了SnI 4前驱体的适宜蒸发温度以及每循环生长与衬底温度的关系。在225 ~ 600℃的温度范围内发现了薄膜中的晶体生长。光谱分析显示，在300°C以上的温度下生长的薄膜中残留少量的碘，并暗示形成了单相氧化物。确定了该前驱体体系制备二氧化硅薄膜的适宜性。

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Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

Polycrystalline SnO 2 thin films were grown by atomic layer deposition (ALD) on SiO 2 /Si(100) substrates from SnI 4 and O 3 . Suitable evaporation temperatures for the SnI 4 precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth in the films in the temperature range of 225–600 °C was identified. Spectroscopic analyses revealed low amounts of residual iodine and implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO 2 films was established.

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来源期刊

Beilstein Journal of Nanotechnology NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.70

自引率

3.20%

发文量

109

审稿时长

2 months

期刊介绍： The Beilstein Journal of Nanotechnology is an international, peer-reviewed, Open Access journal. It provides a unique platform for rapid publication without any charges (free for author and reader) – Platinum Open Access. The content is freely accessible 365 days a year to any user worldwide. Articles are available online immediately upon publication and are publicly archived in all major repositories. In addition, it provides a platform for publishing thematic issues (theme-based collections of articles) on topical issues in nanoscience and nanotechnology. The journal is published and completely funded by the Beilstein-Institut, a non-profit foundation located in Frankfurt am Main, Germany. The editor-in-chief is Professor Thomas Schimmel – Karlsruhe Institute of Technology. He is supported by more than 20 associate editors who are responsible for a particular subject area within the scope of the journal.