射频溅射改善沉积后退火Ga2O3/SiC和Ga2O3/Al2O3/SiC后栅晶体管性能

Micro Pub Date : 2023-09-30 DOI:10.3390/micro3040055
Hee-Jae Lee, Geon-Hee Lee, Seung-Hwan Chung, Dong-Wook Byun, Michael A. Schweitz, Dae Hwan Chun, Nack Yong Joo, Minwho Lim, Tobias Erlbacher, Sang-Mo Koo
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引用次数: 0

摘要

Ga2O3的高击穿电场、n型掺杂能力、高质量衬底的可用性和高Baliga优值显示了其作为下一代功率半导体材料的潜力。然而,Ga2O3的导热系数低于其他宽带隙材料,导致电性能下降,器件可靠性降低。在具有高导热性的衬底上形成异质结构已被注意到以促进器件中的散热。在这项工作中,采用射频溅射的方法在SiC衬底上沉积了带有Al2O3中间层的Ga2O3薄膜。沉积后在900℃下退火1 h使Ga2O3薄膜结晶。俄歇电子能谱深度分布揭示了退火后Ga2O3/Al2O3界面处Ga和Al原子的相互扩散。x射线衍射(XRD)结果表明,经过退火和添加Al2O3中间层后,结晶度得到改善。根据Scherrer方程计算,晶体尺寸从5.72 nm增加到8.09 nm。在Al2O3/SiC上退火的Ga2O3薄膜中载流子迁移率从5.31增加到28.39 cm2 V−1 s−1。Ga2O3/SiC和Ga2O3/Al2O3/SiC背极晶体管的转移和输出特性反映了XRD和霍尔测量结果的趋势。因此,这项工作表明,通过沉积后退火和引入Al2O3中间层可以改善Ga2O3/SiC后门晶体管的物理和电学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improved Properties of Post-Deposition Annealed Ga2O3/SiC and Ga2O3/Al2O3/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering
The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga2O3 demonstrate its potential as a next-generation power semiconductor material. However, the thermal conductivity of Ga2O3 is lower than that of other wide-bandgap materials, resulting in the degradation of the electrical performance and reduced reliability of devices. The heterostructure formation on substrates with high thermal conductivity has been noted to facilitate heat dissipation in devices. In this work, Ga2O3 thin films with an Al2O3 interlayer were deposited on SiC substrates by radio frequency sputtering. Post-deposition annealing was performed at 900 °C for 1 h to crystallize the Ga2O3 thin films. The Auger electron spectroscopy depth profiles revealed the interdiffusion of the Ga and Al atoms at the Ga2O3/Al2O3 interface after annealing. The X-ray diffraction (XRD) results displayed improved crystallinity after annealing and adding the Al2O3 interlayer. The crystallite size increased from 5.72 to 8.09 nm as calculated by the Scherrer equation using the full width at half maximum (FWHM). The carrier mobility was enhanced from 5.31 to 28.39 cm2 V−1 s−1 in the annealed Ga2O3 thin films on Al2O3/SiC. The transfer and output characteristics of the Ga2O3/SiC and Ga2O3/Al2O3/SiC back-gate transistors reflect the trend of the XRD and Hall measurement results. Therefore, this work demonstrated that the physical and electrical properties of the Ga2O3/SiC back-gate transistors can be improved by post-deposition annealing and the introduction of an Al2O3 interlayer.
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