Zn和W掺杂水平对热致变色vo2基薄膜性能的影响

Haji F. Haji, Margaret E. Samiji, Nuru R. Mlyuka
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引用次数: 0

摘要

采用直流磁控溅射技术,在425℃的衬底温度下,成功地在碱石灰玻璃(SLG)衬底上沉积了W/ zn掺杂的VO2薄膜。目的是研究Zn掺杂水平对vo2基薄膜的转变温度()、发光透过率(Tlum)和太阳透过率调制(ΔTsol)的影响。采用UV/VIS/NIR光谱仪、x射线衍射仪(XRD)、原子力显微镜(AFM)和卢瑟福后向散射光谱仪(RBS)对薄膜进行表征。结果表明,W/Zn共掺杂的VO2薄膜在~ 10.8 at。% Zn的透光率为~ 40.4%,太阳透过率调制率为10.2%。此外,在~ 10.8 at时,得到了Zn和W共掺杂VO2薄膜的转变温度。在23.1°C时,% Zn比~ 3.9 at的薄膜的25.6°C和26.8°C时要低。% Zn和~ 2.8 at。% Zn。当锌掺杂水平高于10.8 at时,不可能沉积薄膜。%由于一些技术限制。这些发现表明,在W/Zn共掺杂的vo2基薄膜中,具有控制Zn比例的薄膜具有用于智能窗口等应用的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impact of Zn and W Doping Levels on Properties of Thermochromic VO2-Based Thin Films
DC magnetron sputtering at a substrate temperature of 425 °C was used to successfully deposit W/Zn-doped VO2 thin films on soda lime glass (SLG) substrates. The aim was to investigate the influence of Zn doping levels on the transition temperature ( ), luminous transmittance (Tlum) and solar transmittance modulation (ΔTsol) of VO2-based thin films. UV/VIS/NIR spectrometer, X-ray Diffraction (XRD), Atomic Force Microscope (AFM), and Rutherford Backscattering Spectroscopy (RBS) were used to characterise the thin films. It was revealed that W/Zn co-doped VO2 thin films with ~ 10.8 at.% Zn showed a luminous transmittance of ~ 40.4%, with excellent solar transmittance modulation of 10.2%. Furthermore, the transition temperature obtained for the Zn and W co-doped VO2 films with ~ 10.8 at.% Zn was lower at 23.1 °C compared to 25.6 °C and 26.8 °C for thin films with ~ 3.9 at.% Zn and ~ 2.8 at.% Zn, respectively. It was not possible to deposit the films with Zn doping level above 10.8 at.% due to some technical limitations. These findings indicate that thin films with a controlled proportion of Zn in the W/Zn co-doped VO2-based thin films have the potential to be employed for applications such as smart windows.
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