Simultaneous measurement of impurities and composition by secondary ion mass spectrometry with optical emission spectrometry

Various secondary particles are emitted when the surface of solid matter is irradiated with ions. This phenomenon has been utilized in several methods to analyze target materials. In analytical techniques, the method used to detect secondary ions is called “secondary ion mass spectrometry (SIMS).” In contrast, “secondary ion mass spectrometry with optical emission spectrometry (SIMS‐OES)” detects photons emitted from sputtered, excited atoms. Both SIMS and OES can characterize a sample surface and perform local elemental analysis of the surface, depth profiling of elements, and detection of any atom. SIMS with high sensitivity has mainly been developed for the impurity analyses of semiconductors. However, no research has been reported on applications using SIMS‐OES or a combination of SIMS and SIMS‐OES. In this study, we prove that atomic emission can be observed via ion irradiation. In addition, we show that the composition analysis is possible using the SIMS‐OES method. Herein, impurity and composition analyses were enabled by utilizing atomic emission. Moreover, we proved that an assessment with high‐depth direction resolution is feasible by etching the circumference of a crater in advance.