基于砷化镓的谐振隧道二极管:器件方面的设计、制造、表征和应用

IF 4.8 4区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Journal of Semiconductors Pub Date : 2023-10-01 DOI:10.1088/1674-4926/44/10/103101

Swagata Samanta

{"title":"基于砷化镓的谐振隧道二极管:器件方面的设计、制造、表征和应用","authors":"Swagata Samanta","doi":"10.1088/1674-4926/44/10/103101","DOIUrl":null,"url":null,"abstract":"Abstract This review article discusses the development of gallium arsenide (GaAs)-based resonant tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first review of GaAs RTD technology which covers different epitaxial-structure design, fabrication techniques, and characterizations for various application areas. It is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments, as well as have an outlook on the current trends and future developments in GaAs RTD research.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":null,"pages":null},"PeriodicalIF":4.8000,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications\",\"authors\":\"Swagata Samanta\",\"doi\":\"10.1088/1674-4926/44/10/103101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract This review article discusses the development of gallium arsenide (GaAs)-based resonant tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first review of GaAs RTD technology which covers different epitaxial-structure design, fabrication techniques, and characterizations for various application areas. It is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments, as well as have an outlook on the current trends and future developments in GaAs RTD research.\",\"PeriodicalId\":17038,\"journal\":{\"name\":\"Journal of Semiconductors\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.8000,\"publicationDate\":\"2023-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1674-4926/44/10/103101\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1674-4926/44/10/103101","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 1

摘要

摘要本文综述了20世纪70年代以来砷化镓(GaAs)基谐振隧道二极管(RTD)的研究进展。据我所知，这篇文章是GaAs RTD技术的第一篇综述，它涵盖了不同的外延结构设计、制造技术和各种应用领域的表征。本文所介绍的细节将有助于读者了解以往的成就，并对GaAs RTD研究的当前趋势和未来发展有一个展望。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications

Abstract This review article discusses the development of gallium arsenide (GaAs)-based resonant tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first review of GaAs RTD technology which covers different epitaxial-structure design, fabrication techniques, and characterizations for various application areas. It is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments, as well as have an outlook on the current trends and future developments in GaAs RTD research.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Journal of Semiconductors PHYSICS, CONDENSED MATTER-

CiteScore

6.70

自引率

9.80%

发文量

119

期刊介绍： Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.