基于砷化镓的谐振隧道二极管:器件方面的设计、制造、表征和应用

IF 4.8 4区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Journal of Semiconductors Pub Date : 2023-10-01 DOI:10.1088/1674-4926/44/10/103101

Swagata Samanta

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引用次数: 1

摘要

摘要本文综述了20世纪70年代以来砷化镓(GaAs)基谐振隧道二极管(RTD)的研究进展。据我所知，这篇文章是GaAs RTD技术的第一篇综述，它涵盖了不同的外延结构设计、制造技术和各种应用领域的表征。本文所介绍的细节将有助于读者了解以往的成就，并对GaAs RTD研究的当前趋势和未来发展有一个展望。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications

Abstract This review article discusses the development of gallium arsenide (GaAs)-based resonant tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first review of GaAs RTD technology which covers different epitaxial-structure design, fabrication techniques, and characterizations for various application areas. It is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments, as well as have an outlook on the current trends and future developments in GaAs RTD research.

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来源期刊

Journal of Semiconductors PHYSICS, CONDENSED MATTER-

CiteScore

6.70

自引率

9.80%

发文量

119

期刊介绍： Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.