Hyun Gu Han , Jae Won Choi , Minsu Son , Ki Chul Kim
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引用次数: 0
摘要
本研究探讨了缺陷工程对 NiPS3 单层催化剂在氢进化反应(HER)中催化活性的影响。通过涉及水分子离解吸附和随后的电化学吸附离解质子的多步骤机制,探讨了单层基底面上三种不同类型的空位。研究发现,Ni 和 S 两个位点中空位的共形成在提高单层催化性能方面最为有效。反应热力学的一个关键资源是水分子在空置的 S 位点上发生类似于 S 取代的物理吸附,随后 OH 和 H 被离解地占据到 S 和 Ni 元素的空置位点上,NiS 双空位构型以较低的活化能垒促进了这一过程。调查显示,单层-H 键的成键轨道贡献率最高,这使其成为具有高 HER 活性的过渡金属磷铬化物最理想的缺陷工程方法。总之,本研究强调了受控缺陷工程在提高 NiPS3 单层催化剂 HER 催化性能方面的重要意义。
Unlocking power of neighboring vacancies in boosting hydrogen evolution reactions on two-dimensional NiPS3 monolayer
This study investigates the effect of defect engineering on the catalytic activity of a NiPS3 monolayer catalyst for the hydrogen evolution reaction (HER). Three different types of vacancies on the basal plane of the monolayer are explored through a multi-step mechanism involving the dissociative adsorption of a water molecule and subsequent electrochemical adsorption of the dissociated proton. Co-formation of vacancies in both Ni and S sites is found to be the most effective in enhancing the catalytic performance of the monolayer. A key resource for the reaction thermodynamics is the S-substitution-like physisorption of a water molecule on a vacant S site, followed by the dissociative occupation of OH and H into vacant sites of S and Ni elements, boosted by the NiS di-vacancy configuration with low activation energy barriers. Investigation reveals the highest contribution of bonding orbitals to the monolayer-H bond makes it the most desirable defect engineering approach for transition metal phosphorus chalcogenides with high HER activities. Overall, this study highlights the significance of controlled defect engineering in augmenting the catalytic performance of NiPS3 monolayer catalysts for HER.