具有增强输出性能的含氟聚酰亚胺薄膜的制备和表征,可作为摩擦纳米发电机负摩擦层的潜在应用

Zhen Pan, Shunqi Yuan, Xi Ren, Zhibin He, Zhenzhong Wang, Shujun Han, Yuexin Qi, Haifeng Yu, Jingang Liu
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引用次数: 0

摘要

纳米技术在先进能源领域的应用日益广泛。摩擦电纳米发电机(TENGs)是一类新型的柔性能量收集装置,在未来人类社会中具有广阔的应用前景。摩擦电材料作为TENG器件的重要组成部分之一,对实现高效发电起着至关重要的作用。传统的聚合物摩擦负性材料,如聚四氟乙烯(PTFE)、聚偏二氟乙烯(PVDF)和Kapton®商标的标准聚酰亚胺(PI)薄膜,基于邻苯二酸酐(PMDA)和4,4 ' -氧二苯胺(ODA),通常输出性能较低。此外,分子结构与摩擦电性能之间的关系仍然是寻找新型摩擦电材料的一个挑战。本工作通过在骨架中加入具有强电子退缩的三氟甲基(-CF3)官能团,设计并制备了一系列含氟聚酰亚胺(FPI)负摩擦层。衍生的FPI-1 (6FDA-6FODA)、FPI-2 (6FDA-TFMB)和FPI-3 (6FDA-TFMDA)树脂在N,N-二甲基乙酰胺(DMAc)和N-甲基-2-吡罗烷酮(NMP)等极性非质子溶剂中具有良好的溶解性。用差示扫描量热法(DSC)分析,通过溶液浇铸法制得的PI薄膜的玻璃化转变温度(Tg)高于280℃。利用所制备的PI薄膜作为摩擦负层,成功制备了TENG原型。PI层分子骨架中的吸电子三氟甲基(-CF3)单元为器件提供了明显增强的输出性能。基于FPI-3 (6FDA-TFMDA)层的TENG器件显示出令人印象深刻的开路电压和短路电流,分别为277.8 V和9.54 μA。与使用易于获取的Kapton®薄膜制造的TENGs相比,这些值高出4~5倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation and Characterization of Fluorine-Containing Polyimide Films with Enhanced Output Performance for Potential Applications as Negative Friction Layers for Triboelectric Nanogenerators
Nanotechnologies are being increasingly widely used in advanced energy fields. Triboelectric nanogenerators (TENGs) represent a class of new-type flexible energy-harvesting devices with promising application prospects in future human societies. As one of the most important parts of TENG devices, triboelectric materials play key roles in the achievement of high-efficiency power generation. Conventional polymer tribo-negative materials, such as polytetrafluoroethylene (PTFE), polyvinylidene difluoride (PVDF), and the standard polyimide (PI) film with the Kapton® trademark based on pyromellitic anhydride (PMDA) and 4,4′-oxydianiline (ODA), usually suffer from low output performance. In addition, the relationship between molecular structure and triboelectric properties remains a challenge in the search for novel triboelectric materials. In the current work, by incorporating functional groups of trifluoromethyl (–CF3) with strong electron withdrawal into the backbone, a series of fluorine-containing polyimide (FPI) negative friction layers have been designed and prepared. The derived FPI-1 (6FDA-6FODA), FPI-2 (6FDA-TFMB), and FPI-3 (6FDA-TFMDA) resins possessed good solubility in polar aprotic solvents, such as the N,N-dimethylacetamide (DMAc) and N-methyl-2-pyrrolidone (NMP). The PI films obtained via the solution-casting procedure showed glass transition temperatures (Tg) higher than 280 °C with differential scanning calorimetry (DSC) analyses. The TENG prototypes were successfully fabricated using the developed PI films as the tribo-negative layers. The electron-withdrawing trifluoromethyl (–CF3) units in the molecular backbones of the PI layers provided the devices with an apparently enhanced output performance. The FPI-3 (6FDA-TFMDA) layer-based TENG devices showcased an especially impressive open-circuit voltage and short-circuit current, measuring 277.8 V and 9.54 μA, respectively. These values were 4~5 times greater when compared to the TENGs manufactured using the readily accessible Kapton® film.
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