{"title":"带有 CuSbS2 背面场层的 Ag2S 和 In2Se3 缓冲层对 Cu2ZnSnS4 (CZTS) 太阳能电池中发电和重组率的影响","authors":"Pratibha Chauhan, Surbhi Agarwal, Vaibhava Srivastava, Sadanand Maurya, M. Khalid Hossain, Jaya Madan, Rajesh Kumar Yadav, Pooja Lohia, Dilip Kumar Dwivedi, Asma A. Alothman","doi":"10.1002/pip.3743","DOIUrl":null,"url":null,"abstract":"<p>For photovoltaic (PV) applications, the earth-abundant and non-hazardous Kesterite Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) is a possible substitute for chalcopyrite copper indium gallium selenide (CIGS). This research offers insight into the most innovative method for improving the performance of Kesterite solar cells (SCs) by using CuSbS<sub>2</sub> back surface field (BSF) and Ag<sub>2</sub>S and In<sub>2</sub>Se<sub>3</sub> as buffer layers, focuses on aligning energy bands, reducing non-radiative recombination, and improving open-circuit voltage (V<sub>oc</sub>). The proposed cells are Ni/CuSbS<sub>2</sub>/CZTS/In<sub>2</sub>Se<sub>3</sub>/ITO/Al and Ni/CuSbS<sub>2</sub>/CZTS/Ag<sub>2</sub>S/ITO/Al by adding interfaces. The optimized CZTS SCs with In<sub>2</sub>Se<sub>3</sub> achieve a short-circuit current density (J<sub>sc</sub>) of 30.274 mA/cm<sup>2</sup>, fill factor (FF) of 89.15%, power conversion efficiency (PCE) of 31.67%, and V<sub>oc</sub> of 1.173 V. With the Ag<sub>2</sub>S buffer layer, PCE is 31.02%, FF is 88.61%, J<sub>sc</sub> is 30.245 mA/cm<sup>2</sup>, and V<sub>oc</sub> is 1.157 V. These results depict the potential of CZTS-based SCs with improved performance compared with conventional structures.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 3","pages":"156-171"},"PeriodicalIF":8.0000,"publicationDate":"2023-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer\",\"authors\":\"Pratibha Chauhan, Surbhi Agarwal, Vaibhava Srivastava, Sadanand Maurya, M. Khalid Hossain, Jaya Madan, Rajesh Kumar Yadav, Pooja Lohia, Dilip Kumar Dwivedi, Asma A. Alothman\",\"doi\":\"10.1002/pip.3743\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>For photovoltaic (PV) applications, the earth-abundant and non-hazardous Kesterite Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) is a possible substitute for chalcopyrite copper indium gallium selenide (CIGS). This research offers insight into the most innovative method for improving the performance of Kesterite solar cells (SCs) by using CuSbS<sub>2</sub> back surface field (BSF) and Ag<sub>2</sub>S and In<sub>2</sub>Se<sub>3</sub> as buffer layers, focuses on aligning energy bands, reducing non-radiative recombination, and improving open-circuit voltage (V<sub>oc</sub>). The proposed cells are Ni/CuSbS<sub>2</sub>/CZTS/In<sub>2</sub>Se<sub>3</sub>/ITO/Al and Ni/CuSbS<sub>2</sub>/CZTS/Ag<sub>2</sub>S/ITO/Al by adding interfaces. The optimized CZTS SCs with In<sub>2</sub>Se<sub>3</sub> achieve a short-circuit current density (J<sub>sc</sub>) of 30.274 mA/cm<sup>2</sup>, fill factor (FF) of 89.15%, power conversion efficiency (PCE) of 31.67%, and V<sub>oc</sub> of 1.173 V. With the Ag<sub>2</sub>S buffer layer, PCE is 31.02%, FF is 88.61%, J<sub>sc</sub> is 30.245 mA/cm<sup>2</sup>, and V<sub>oc</sub> is 1.157 V. These results depict the potential of CZTS-based SCs with improved performance compared with conventional structures.</p>\",\"PeriodicalId\":223,\"journal\":{\"name\":\"Progress in Photovoltaics\",\"volume\":\"32 3\",\"pages\":\"156-171\"},\"PeriodicalIF\":8.0000,\"publicationDate\":\"2023-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Progress in Photovoltaics\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/pip.3743\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENERGY & FUELS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Photovoltaics","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/pip.3743","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer
For photovoltaic (PV) applications, the earth-abundant and non-hazardous Kesterite Cu2ZnSnS4 (CZTS) is a possible substitute for chalcopyrite copper indium gallium selenide (CIGS). This research offers insight into the most innovative method for improving the performance of Kesterite solar cells (SCs) by using CuSbS2 back surface field (BSF) and Ag2S and In2Se3 as buffer layers, focuses on aligning energy bands, reducing non-radiative recombination, and improving open-circuit voltage (Voc). The proposed cells are Ni/CuSbS2/CZTS/In2Se3/ITO/Al and Ni/CuSbS2/CZTS/Ag2S/ITO/Al by adding interfaces. The optimized CZTS SCs with In2Se3 achieve a short-circuit current density (Jsc) of 30.274 mA/cm2, fill factor (FF) of 89.15%, power conversion efficiency (PCE) of 31.67%, and Voc of 1.173 V. With the Ag2S buffer layer, PCE is 31.02%, FF is 88.61%, Jsc is 30.245 mA/cm2, and Voc is 1.157 V. These results depict the potential of CZTS-based SCs with improved performance compared with conventional structures.
期刊介绍：
Progress in Photovoltaics offers a prestigious forum for reporting advances in this rapidly developing technology, aiming to reach all interested professionals, researchers and energy policy-makers.
The key criterion is that all papers submitted should report substantial “progress” in photovoltaics.
Papers are encouraged that report substantial “progress” such as gains in independently certified solar cell efficiency, eligible for a new entry in the journal''s widely referenced Solar Cell Efficiency Tables.
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