常压化学气相沉积法在成核控制过程中大面积生长单层MoS2

IF 1.6 4区 化学 Q4 CHEMISTRY, PHYSICAL
Binbin Ding, Changjun Zhu, Tianming Wang, Lianbi Li, Zebin Li, Lin Cheng, Song Feng, Guoqing Zhang, Yuan Zang, Jichao Hu, Lei Li, Caijuan Xia
{"title":"常压化学气相沉积法在成核控制过程中大面积生长单层MoS2","authors":"Binbin Ding, Changjun Zhu, Tianming Wang, Lianbi Li, Zebin Li, Lin Cheng, Song Feng, Guoqing Zhang, Yuan Zang, Jichao Hu, Lei Li, Caijuan Xia","doi":"10.1002/sia.7264","DOIUrl":null,"url":null,"abstract":"The epitaxial growth of high‐quality and large‐area monolayer (ML) MoS 2 has attracted widespread attention in recent years. Here, MoS 2 on Al 2 O 3 substrate was prepared by using atmospheric‐pressure chemical vapor deposition. The process parameters such as temperature difference and distance between MoO 3 and Al 2 O 3 , nucleation temperature, and heating rate were optimized. The high MoO 3 evaporation temperature facilitates Mo vapor transport to grow ML‐MoS 2 . The introduction of nucleation temperature facilitates the deposition of MoS 2 , and the morphology of the nucleation point is related to the amount of MoO 3‐x deposited on Al 2 O 3 . This process optimization method is also applicable to growth MoS 2 on SiO 2 . The ML‐MoS 2 with a size greater than 1 cm 2 was successfully fabricated on Al 2 O 3 and SiO 2 , which laid a foundation for the practical application of ML‐MoS 2 .","PeriodicalId":22062,"journal":{"name":"Surface and Interface Analysis","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2023-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Large‐area growth of monolayer MoS<sub>2</sub> by using atmospheric‐pressure chemical vapor deposition with nucleation controlling process\",\"authors\":\"Binbin Ding, Changjun Zhu, Tianming Wang, Lianbi Li, Zebin Li, Lin Cheng, Song Feng, Guoqing Zhang, Yuan Zang, Jichao Hu, Lei Li, Caijuan Xia\",\"doi\":\"10.1002/sia.7264\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The epitaxial growth of high‐quality and large‐area monolayer (ML) MoS 2 has attracted widespread attention in recent years. Here, MoS 2 on Al 2 O 3 substrate was prepared by using atmospheric‐pressure chemical vapor deposition. The process parameters such as temperature difference and distance between MoO 3 and Al 2 O 3 , nucleation temperature, and heating rate were optimized. The high MoO 3 evaporation temperature facilitates Mo vapor transport to grow ML‐MoS 2 . The introduction of nucleation temperature facilitates the deposition of MoS 2 , and the morphology of the nucleation point is related to the amount of MoO 3‐x deposited on Al 2 O 3 . This process optimization method is also applicable to growth MoS 2 on SiO 2 . The ML‐MoS 2 with a size greater than 1 cm 2 was successfully fabricated on Al 2 O 3 and SiO 2 , which laid a foundation for the practical application of ML‐MoS 2 .\",\"PeriodicalId\":22062,\"journal\":{\"name\":\"Surface and Interface Analysis\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2023-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Surface and Interface Analysis\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/sia.7264\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface and Interface Analysis","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/sia.7264","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

摘要

近年来,高质量、大面积单层MoS 2的外延生长引起了广泛的关注。本文采用常压化学气相沉积的方法在al_2o_3衬底上制备了mos2。对moo3与al2o3之间的温差和距离、成核温度、加热速率等工艺参数进行了优化。较高的mo2o3蒸发温度有利于Mo蒸气输运生长ML - mo2o3。成核温度的引入有利于mo2o3的沉积,成核点的形貌与沉积在al2o3上的mo2o3的量有关。该工艺优化方法同样适用于在sio2上生长MoS 2。在al2o3和sio2上成功制备了尺寸大于1 cm 2的ML - MoS 2,为ML - MoS 2的实际应用奠定了基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Large‐area growth of monolayer MoS2 by using atmospheric‐pressure chemical vapor deposition with nucleation controlling process
The epitaxial growth of high‐quality and large‐area monolayer (ML) MoS 2 has attracted widespread attention in recent years. Here, MoS 2 on Al 2 O 3 substrate was prepared by using atmospheric‐pressure chemical vapor deposition. The process parameters such as temperature difference and distance between MoO 3 and Al 2 O 3 , nucleation temperature, and heating rate were optimized. The high MoO 3 evaporation temperature facilitates Mo vapor transport to grow ML‐MoS 2 . The introduction of nucleation temperature facilitates the deposition of MoS 2 , and the morphology of the nucleation point is related to the amount of MoO 3‐x deposited on Al 2 O 3 . This process optimization method is also applicable to growth MoS 2 on SiO 2 . The ML‐MoS 2 with a size greater than 1 cm 2 was successfully fabricated on Al 2 O 3 and SiO 2 , which laid a foundation for the practical application of ML‐MoS 2 .
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来源期刊
Surface and Interface Analysis
Surface and Interface Analysis 化学-物理化学
CiteScore
3.30
自引率
5.90%
发文量
130
审稿时长
4.4 months
期刊介绍: Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).
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