氧化锆基薄膜中氧缺陷对酸性介质中氧还原反应的影响

Yuri Watanabe, Koichi Matsuzawa, Ryuji Monden, Takaaki Nagai, Akimitsu Ishihara
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引用次数: 0

摘要

采用射频磁控溅射法制备氧化锆薄膜作为酸性介质中氧还原反应(ORR)的模型催化剂。研究了在酸性介质中溅射条件对ORR活性的影响。沉积温度对ORR活性的影响取决于沉积大气中是否含有氧(Ar+ o2, Ar+ n2 + o2)或仅含氮(Ar+ n2)。在300 ~ 800℃的沉积温度范围内,用Ar+ n2制备的电极表现出较高的ORR活性。XRD和XPS结果表明,在Ar+ n2气氛中生长四方相,而在Ar+ o2气氛中生长四方相和单斜相的混合相。结果表明,四方相比例高的氧化锆薄膜具有较高的ORR活性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of Oxygen Defects in Zr Oxide-Based Thin Films on Oxygen Reduction Reaction in Acidic Media
Zirconium oxide thin films were prepared by RF magnetron sputtering as model catalysts for oxygen reduction reaction (ORR) in acidic media. The effects of sputtering conditions on ORR activity in acidic media was investigated. The effect of the deposition temperature on the ORR activity depended on whether the deposition atmosphere contained oxygen (Ar+O 2 , Ar+N 2 +O 2 ) or only nitrogen (Ar+N 2 ). In the range of 300-800 °C of the deposition temperature, the electrodes prepared in an Ar+N 2 showed higher ORR activity. XRD and XPS results showed that the tetragonal phase grew in an Ar+N 2 atmosphere, while a mixed phase of tetragonal and monoclinic phases grew in an Ar+O 2 atmosphere. It was found that Zr oxide thin film with a high proportion of tetragonal phase showed high ORR activity.
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