(10-40 MeV) Auq+重离子辐照下二氧化硅(SiO2)薄膜的溅射和结构修饰

IF 1.6 4区化学 Q4 CHEMISTRY, PHYSICAL

Surface and Interface Analysis Pub Date : 2023-09-18 DOI:10.1002/sia.7257

Ster Mammeri, Mhamed Salhi, Abir Boubir, Mandla Msimanga, Christopher Mtshali, Mlungisi Nkosi

{"title":"(10-40 MeV) Auq+重离子辐照下二氧化硅(SiO2)薄膜的溅射和结构修饰","authors":"Ster Mammeri, Mhamed Salhi, Abir Boubir, Mandla Msimanga, Christopher Mtshali, Mlungisi Nkosi","doi":"10.1002/sia.7257","DOIUrl":null,"url":null,"abstract":"Surface sputtering and structural modifications induced in silicon dioxide thin films (SiO 2 /Si) deposited on silicon substrates and irradiated by swift (10–40 MeV) heavy Au q+ (q = +4, +6, +7, and +9) ions were investigated by grazing‐incidence X‐ray diffraction (GIXRD) spectroscopy, Rutherford backscattering (RBS) spectrometry and time‐of‐flight elastic recoil detection (ToF‐ERDA) technique. The GIXRD analysis of the as‐deposited and irradiated samples revealed increasing structural modifications of the SiO 2 thin films under Au q+ ion impacts with increasing ion‐beam energy. The changes consisted of decreased grain sizes with increased strain accompanied by a phase transformation from crystalline to amorphous films. RBS analysis showed a decrease in the mean stoichiometric (O/Si) ratio from (2.2 ± 0.1) to (1.7 ± 0.1), due to preferential sputtering of oxygen, as the incident ion energy increased. The obtained RBS‐results were then completed by those of ToF‐ERDA analysis technique using a 40 MeV Au 9+ heavy ion beam. The preferential sputtering yield ratios (Y Si /Y O ) were determined experimentally both versus electronic stopping power and ion fluence. The obtained results were then compared to numerical values derived from the inelastic thermal spike (i‐TS) model, Sigmund's analytical formula and SRIM simulation code. A good agreement was observed between the measured preferential sputtering data and the i‐TS calculated values, when considering both nuclear elastic and electronic inelastic collision mechanisms. Besides, a close correlation is observed between the electronic stopping power dependent measured sputtering yields and the XRD peak intensity degradation per unit fluence. These observations suggest that the same mechanism of MeV heavy ion‐irradiation induced extended atomic disordering, occurs both in the case of structural modifications and surface sputtering. Finally, the obtained experimental results are discussed on the basis of the i‐TS model.","PeriodicalId":22062,"journal":{"name":"Surface and Interface Analysis","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2023-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sputtering and structural modifications induced in silicon dioxide (SiO<sub>2</sub>) thin films under (10–40 MeV) Au<sup>q+</sup> heavy ion irradiation\",\"authors\":\"Ster Mammeri, Mhamed Salhi, Abir Boubir, Mandla Msimanga, Christopher Mtshali, Mlungisi Nkosi\",\"doi\":\"10.1002/sia.7257\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Surface sputtering and structural modifications induced in silicon dioxide thin films (SiO 2 /Si) deposited on silicon substrates and irradiated by swift (10–40 MeV) heavy Au q+ (q = +4, +6, +7, and +9) ions were investigated by grazing‐incidence X‐ray diffraction (GIXRD) spectroscopy, Rutherford backscattering (RBS) spectrometry and time‐of‐flight elastic recoil detection (ToF‐ERDA) technique. The GIXRD analysis of the as‐deposited and irradiated samples revealed increasing structural modifications of the SiO 2 thin films under Au q+ ion impacts with increasing ion‐beam energy. The changes consisted of decreased grain sizes with increased strain accompanied by a phase transformation from crystalline to amorphous films. RBS analysis showed a decrease in the mean stoichiometric (O/Si) ratio from (2.2 ± 0.1) to (1.7 ± 0.1), due to preferential sputtering of oxygen, as the incident ion energy increased. The obtained RBS‐results were then completed by those of ToF‐ERDA analysis technique using a 40 MeV Au 9+ heavy ion beam. The preferential sputtering yield ratios (Y Si /Y O ) were determined experimentally both versus electronic stopping power and ion fluence. The obtained results were then compared to numerical values derived from the inelastic thermal spike (i‐TS) model, Sigmund's analytical formula and SRIM simulation code. A good agreement was observed between the measured preferential sputtering data and the i‐TS calculated values, when considering both nuclear elastic and electronic inelastic collision mechanisms. Besides, a close correlation is observed between the electronic stopping power dependent measured sputtering yields and the XRD peak intensity degradation per unit fluence. These observations suggest that the same mechanism of MeV heavy ion‐irradiation induced extended atomic disordering, occurs both in the case of structural modifications and surface sputtering. Finally, the obtained experimental results are discussed on the basis of the i‐TS model.\",\"PeriodicalId\":22062,\"journal\":{\"name\":\"Surface and Interface Analysis\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2023-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Surface and Interface Analysis\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/sia.7257\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface and Interface Analysis","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/sia.7257","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

摘要

采用掠入射X射线衍射(GIXRD)光谱、卢瑟福后向散射(RBS)光谱和飞行时间弹性反冲检测(ToF - ERDA)技术研究了快速(10-40 MeV)重Au q+ (q = +4、+6、+7和+9)离子辐照沉积在硅衬底上的二氧化硅薄膜(sio2 /Si)表面溅射和结构修饰。砷沉积和辐照样品的GIXRD分析表明，随着离子束能量的增加，Au q+离子作用下sio2薄膜的结构修饰增加。随着应变的增加，晶粒尺寸减小，并伴有从晶态到非晶态的相变。RBS分析表明，随着入射离子能量的增加，由于氧优先溅射，平均化学计量比(O/Si)从(2.2±0.1)下降到(1.7±0.1)。利用40mev Au 9+重离子束，用ToF - ERDA分析技术完成RBS‐结果。实验确定了电子停止功率和离子影响下的优先溅射良率(Y Si /Y O)。然后将所得结果与非弹性热峰值(i‐TS)模型、西格蒙德解析公式和SRIM模拟代码的数值进行比较。当考虑核弹性和电子非弹性碰撞机制时，观测到的优先溅射数据与i - TS计算值吻合得很好。此外，在电子停止功率依赖的溅射量与单位通量的XRD峰强度降解之间观察到密切的相关性。这些观察结果表明，在结构修饰和表面溅射的情况下，MeV重离子辐照诱导扩展原子无序的机制是相同的。最后，在i‐TS模型的基础上对得到的实验结果进行了讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Sputtering and structural modifications induced in silicon dioxide (SiO₂) thin films under (10–40 MeV) Au^q+ heavy ion irradiation

Surface sputtering and structural modifications induced in silicon dioxide thin films (SiO 2 /Si) deposited on silicon substrates and irradiated by swift (10–40 MeV) heavy Au q+ (q = +4, +6, +7, and +9) ions were investigated by grazing‐incidence X‐ray diffraction (GIXRD) spectroscopy, Rutherford backscattering (RBS) spectrometry and time‐of‐flight elastic recoil detection (ToF‐ERDA) technique. The GIXRD analysis of the as‐deposited and irradiated samples revealed increasing structural modifications of the SiO 2 thin films under Au q+ ion impacts with increasing ion‐beam energy. The changes consisted of decreased grain sizes with increased strain accompanied by a phase transformation from crystalline to amorphous films. RBS analysis showed a decrease in the mean stoichiometric (O/Si) ratio from (2.2 ± 0.1) to (1.7 ± 0.1), due to preferential sputtering of oxygen, as the incident ion energy increased. The obtained RBS‐results were then completed by those of ToF‐ERDA analysis technique using a 40 MeV Au 9+ heavy ion beam. The preferential sputtering yield ratios (Y Si /Y O ) were determined experimentally both versus electronic stopping power and ion fluence. The obtained results were then compared to numerical values derived from the inelastic thermal spike (i‐TS) model, Sigmund's analytical formula and SRIM simulation code. A good agreement was observed between the measured preferential sputtering data and the i‐TS calculated values, when considering both nuclear elastic and electronic inelastic collision mechanisms. Besides, a close correlation is observed between the electronic stopping power dependent measured sputtering yields and the XRD peak intensity degradation per unit fluence. These observations suggest that the same mechanism of MeV heavy ion‐irradiation induced extended atomic disordering, occurs both in the case of structural modifications and surface sputtering. Finally, the obtained experimental results are discussed on the basis of the i‐TS model.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Surface and Interface Analysis 化学-物理化学

CiteScore

3.30

自引率

5.90%

发文量

130

审稿时长

4.4 months

期刊介绍： Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).