Luyang Wang;Aman Kumar Jha;Salmaan H. Baxamusa;Jack Kotovsky;Robert J. Deri;Rebecca B. Swertfeger;Prabhu Thiagarajan;Mark T. Crowley;Gerald Thaler;Jiyon Song;Kevin P. Pipe
{"title":"高功率二极管激光表面老化过程的高分辨率热分析","authors":"Luyang Wang;Aman Kumar Jha;Salmaan H. Baxamusa;Jack Kotovsky;Robert J. Deri;Rebecca B. Swertfeger;Prabhu Thiagarajan;Mark T. Crowley;Gerald Thaler;Jiyon Song;Kevin P. Pipe","doi":"10.1109/JQE.2023.3325256","DOIUrl":null,"url":null,"abstract":"We study the facet temperature distribution of a high-power diode laser over its lifetime using a noncontact, high spatial resolution CCD-based thermoreflectance technique. Based on the known correlation between non-radiative defects and heating, thermal maps can provide valuable information regarding the formation and evolution of small point defects that are at or near the facet during aging. In the laser under study in this work we measure the appearance of local hot spots on the facet, including concentrated hot spots that appear just before or just after COD and are correlated with loss of local light emission. The locations of these hot spots do not exhibit morphology changes in high-resolution SEM imaging of the facet, indicating that the related defects are too small to be observable in SEM or are located at some depth under the facet. Prior to COD, we measure a gradual facet temperature increase accompanied by a gradual optical power decrease and gradual facet optical absorption increase, indicating gradual degradation of the laser.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2023-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Resolution Thermal Profiling of a High-Power Diode Laser Facet During Aging\",\"authors\":\"Luyang Wang;Aman Kumar Jha;Salmaan H. Baxamusa;Jack Kotovsky;Robert J. Deri;Rebecca B. Swertfeger;Prabhu Thiagarajan;Mark T. Crowley;Gerald Thaler;Jiyon Song;Kevin P. Pipe\",\"doi\":\"10.1109/JQE.2023.3325256\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We study the facet temperature distribution of a high-power diode laser over its lifetime using a noncontact, high spatial resolution CCD-based thermoreflectance technique. Based on the known correlation between non-radiative defects and heating, thermal maps can provide valuable information regarding the formation and evolution of small point defects that are at or near the facet during aging. In the laser under study in this work we measure the appearance of local hot spots on the facet, including concentrated hot spots that appear just before or just after COD and are correlated with loss of local light emission. The locations of these hot spots do not exhibit morphology changes in high-resolution SEM imaging of the facet, indicating that the related defects are too small to be observable in SEM or are located at some depth under the facet. Prior to COD, we measure a gradual facet temperature increase accompanied by a gradual optical power decrease and gradual facet optical absorption increase, indicating gradual degradation of the laser.\",\"PeriodicalId\":13200,\"journal\":{\"name\":\"IEEE Journal of Quantum Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2023-10-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10288188/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10288188/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
High-Resolution Thermal Profiling of a High-Power Diode Laser Facet During Aging
We study the facet temperature distribution of a high-power diode laser over its lifetime using a noncontact, high spatial resolution CCD-based thermoreflectance technique. Based on the known correlation between non-radiative defects and heating, thermal maps can provide valuable information regarding the formation and evolution of small point defects that are at or near the facet during aging. In the laser under study in this work we measure the appearance of local hot spots on the facet, including concentrated hot spots that appear just before or just after COD and are correlated with loss of local light emission. The locations of these hot spots do not exhibit morphology changes in high-resolution SEM imaging of the facet, indicating that the related defects are too small to be observable in SEM or are located at some depth under the facet. Prior to COD, we measure a gradual facet temperature increase accompanied by a gradual optical power decrease and gradual facet optical absorption increase, indicating gradual degradation of the laser.
期刊介绍:
The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.