23.5 GHz铌酸锂薄膜声滤波器,IL为2.38 dB, FBW为18.2%

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Omar Barrera;Sinwoo Cho;Lezli Matto;Jack Kramer;Kenny Huynh;Vakhtang Chulukhadze;Yen-Wei Chang;Mark S. Goorsky;Ruochen Lu
{"title":"23.5 GHz铌酸锂薄膜声滤波器,IL为2.38 dB, FBW为18.2%","authors":"Omar Barrera;Sinwoo Cho;Lezli Matto;Jack Kramer;Kenny Huynh;Vakhtang Chulukhadze;Yen-Wei Chang;Mark S. Goorsky;Ruochen Lu","doi":"10.1109/JMEMS.2023.3314666","DOIUrl":null,"url":null,"abstract":"This work reports an acoustic filter at 23.5 GHz with a low insertion loss (IL) of 2.38 dB and a 3-dB fractional bandwidth (FBW) of 18.2%, significantly surpassing the state-of-the-art. The device leverages electrically coupled acoustic resonators in 100 nm 128° Y-cut lithium niobate (LiNbO3) piezoelectric thin film, operating in the first-order antisymmetric (A1) mode. A new film stack, namely transferred thin-film LiNbO3 on silicon (Si) substrate with an intermediate amorphous silicon (a-Si) layer, facilitates the record-breaking performance at millimeter-wave (mmWave). The filter features a compact footprint of 0.56 mm2. In this letter, acoustic and EM consideration, along with material characterization with X-ray diffraction and verified with cross-sectional electron microscopy are reported. Upon further development, the reported filter platform can enable various front-end signal-processing functions at mmWave. [2023-0129]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"32 6","pages":"622-625"},"PeriodicalIF":2.5000,"publicationDate":"2023-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10288383","citationCount":"6","resultStr":"{\"title\":\"Thin-Film Lithium Niobate Acoustic Filter at 23.5 GHz With 2.38 dB IL and 18.2% FBW\",\"authors\":\"Omar Barrera;Sinwoo Cho;Lezli Matto;Jack Kramer;Kenny Huynh;Vakhtang Chulukhadze;Yen-Wei Chang;Mark S. Goorsky;Ruochen Lu\",\"doi\":\"10.1109/JMEMS.2023.3314666\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work reports an acoustic filter at 23.5 GHz with a low insertion loss (IL) of 2.38 dB and a 3-dB fractional bandwidth (FBW) of 18.2%, significantly surpassing the state-of-the-art. The device leverages electrically coupled acoustic resonators in 100 nm 128° Y-cut lithium niobate (LiNbO3) piezoelectric thin film, operating in the first-order antisymmetric (A1) mode. A new film stack, namely transferred thin-film LiNbO3 on silicon (Si) substrate with an intermediate amorphous silicon (a-Si) layer, facilitates the record-breaking performance at millimeter-wave (mmWave). The filter features a compact footprint of 0.56 mm2. In this letter, acoustic and EM consideration, along with material characterization with X-ray diffraction and verified with cross-sectional electron microscopy are reported. Upon further development, the reported filter platform can enable various front-end signal-processing functions at mmWave. [2023-0129]\",\"PeriodicalId\":16621,\"journal\":{\"name\":\"Journal of Microelectromechanical Systems\",\"volume\":\"32 6\",\"pages\":\"622-625\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2023-10-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10288383\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Microelectromechanical Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10288383/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Microelectromechanical Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10288383/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 6

摘要

这项工作报告了23.5 GHz的声滤波器,其插入损耗(IL)低至2.38 dB, 3db分数带宽(FBW)为18.2%,大大超过了目前的水平。该器件利用100 nm 128°y型切割铌酸锂(LiNbO3)压电薄膜中的电耦合声学谐振器,以一阶反对称(A1)模式工作。一种新的薄膜堆栈,即在硅(Si)衬底上带有中间非晶硅(A -Si)层的转移薄膜LiNbO3,有助于在毫米波(mmWave)下实现破纪录的性能。该过滤器的特点是紧凑的占地面积为0.56 mm2。在这封信中,报告了声学和EM考虑,以及x射线衍射和截面电子显微镜验证的材料表征。经过进一步开发,所报道的滤波器平台可以实现毫米波的各种前端信号处理功能。(2023 - 0129)
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thin-Film Lithium Niobate Acoustic Filter at 23.5 GHz With 2.38 dB IL and 18.2% FBW
This work reports an acoustic filter at 23.5 GHz with a low insertion loss (IL) of 2.38 dB and a 3-dB fractional bandwidth (FBW) of 18.2%, significantly surpassing the state-of-the-art. The device leverages electrically coupled acoustic resonators in 100 nm 128° Y-cut lithium niobate (LiNbO3) piezoelectric thin film, operating in the first-order antisymmetric (A1) mode. A new film stack, namely transferred thin-film LiNbO3 on silicon (Si) substrate with an intermediate amorphous silicon (a-Si) layer, facilitates the record-breaking performance at millimeter-wave (mmWave). The filter features a compact footprint of 0.56 mm2. In this letter, acoustic and EM consideration, along with material characterization with X-ray diffraction and verified with cross-sectional electron microscopy are reported. Upon further development, the reported filter platform can enable various front-end signal-processing functions at mmWave. [2023-0129]
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Microelectromechanical Systems
Journal of Microelectromechanical Systems 工程技术-工程:电子与电气
CiteScore
6.20
自引率
7.40%
发文量
115
审稿时长
7.5 months
期刊介绍: The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信