脉冲功率下窄谱LED发光动力学

IF 1.1 Q4 QUANTUM SCIENCE & TECHNOLOGY

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-06-26 DOI:10.15407/spqeo26.02.230

V.A. Andriichuk, M.S. Nakonechnyi, Ya.O. Filiuk

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引用次数: 0

摘要

本文给出了基于InGaN-GaN 450和520 nm结构以及AlGaInP-GaAs 625 nm结构的窄光谱led发光动力学的实验研究结果。在脉冲功率作用下，光通量强度的增加和减少用包含快慢分量的指数依赖性来描述。三种LED样品的时间常数均随脉冲频率的增加而减小。慢速分量的时间常数随电流和电压脉冲幅值的增大而减小。在LED能量特性的频率依赖性上，最大光输出在75…100 kHz的频率上被观察到。频率的进一步增加导致LED的能量效率下降。基于LED等效电路和能量电路对所得结果进行了解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Kinetics of narrow-spectrum LED glow under pulsed power

The results of experimental investigations of the glow kinetics of narrow-spectrum LEDs based on InGaN-GaN 450 and 520 nm and AlGaInP-GaAs 625 nm structures are presented. The increase and decrease of the light flux intensity under pulsed power are described by exponential dependences containing fast and slow components. The time constants of both components decrease with the increase of the pulse frequency for all three types of LED samples. The time constant of the slow component decreases with the increase of the current and voltage pulse amplitudes. The maximum light output on the frequency dependences of LED energy characteristics is observed at the frequency of 75…100 kHz. Further frequency increase results in the decrease of the LED energy efficiency. The obtained results are explained based on the LED equivalent electrical and energy circuits.

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来源期刊

Semiconductor Physics Quantum Electronics & Optoelectronics QUANTUM SCIENCE & TECHNOLOGY-

CiteScore

1.80

自引率

22.20%

发文量

审稿时长

15 weeks