使用e -test和SPICE模型对高速器件进行性能改进

T. Kwon, Sang-Hoon Lee, Tae-Seon Kim, Hoe-Jin Lee, Young-Kwan Park, Taek-Soo Kim, Seok-Jin Kim, J. Kong
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引用次数: 2

摘要

为了提高芯片的性能,有时会在制造阶段进行设计或工艺优化。然而,通过实际的晶圆加工来修改设计和工艺会增加上市时间。本文介绍了一种基于SPICE模型和e测试(即阈值电压和饱和电流)的新型IC工艺对中方法的有效仿真方法。该方法能够在改变实际工艺条件之前获得最佳的e测试,以提高高速器件的性能。此外,响应面法(RSM)被用作该新程序的重要统计工具。通过对ALPHA CPU集成电路工艺设计定心问题的分析,证明了该方法的有效性和高效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance improvement for high speed devices using E-tests and the SPICE model
In order to improve the chip performance, a design or a process optimization occurs occasionally at the manufacturing stage. However modifying the design and the process through the real wafer processing of fabrication increases the time to market. This paper describes an efficient simulation approach for a new IC process centering method based on the SPICE model and E-tests (i.e., threshold voltage and saturation current). This methodology enables obtaining the optimal E-tests for improving the performance of high speed devices, before changing the real process conditions. In addition, the Response Surface Method (RSM) is used as a significant statistical tool for this new procedure. The validity and efficiency of this approach are proven by applying it to an IC process design centering problem for ALPHA CPU.
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