AIN/AlxGa1-xN谐振隧道二极管

2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW) Pub Date : 2007-06-25 DOI:10.1109/MSMW.2007.4294759

O. Botsula, E. Prokhorov, A. Suzdaltsev, A. V. Djadchenko

{"title":"AIN/AlxGa1-xN谐振隧道二极管","authors":"O. Botsula, E. Prokhorov, A. Suzdaltsev, A. V. Djadchenko","doi":"10.1109/MSMW.2007.4294759","DOIUrl":null,"url":null,"abstract":"This work investigates the possibilities of using nitrogen compounds for resonance-tunnel diodes (RTD). The I-V characteristics and transmission coefficient of RTD using AlxGa1-xN quantum well and AlN as barrier layer are presented.","PeriodicalId":235293,"journal":{"name":"2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"AIN/AlxGa1-xN Resonance-Tunnel Diodes\",\"authors\":\"O. Botsula, E. Prokhorov, A. Suzdaltsev, A. V. Djadchenko\",\"doi\":\"10.1109/MSMW.2007.4294759\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work investigates the possibilities of using nitrogen compounds for resonance-tunnel diodes (RTD). The I-V characteristics and transmission coefficient of RTD using AlxGa1-xN quantum well and AlN as barrier layer are presented.\",\"PeriodicalId\":235293,\"journal\":{\"name\":\"2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW)\",\"volume\":\"124 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MSMW.2007.4294759\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MSMW.2007.4294759","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本研究探讨了在共振隧道二极管(RTD)中使用氮化合物的可能性。给出了以AlxGa1-xN量子阱和AlN为势垒层的RTD的I-V特性和透射系数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

AIN/AlxGa1-xN Resonance-Tunnel Diodes

This work investigates the possibilities of using nitrogen compounds for resonance-tunnel diodes (RTD). The I-V characteristics and transmission coefficient of RTD using AlxGa1-xN quantum well and AlN as barrier layer are presented.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW)

自引率

0.00%

发文量