MOS模拟电路现实最坏情况设计优化的集成方法

A. Dharchoudhury, S. Kang
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引用次数: 15

摘要

作者提出了一种新的集成方法,通过使用实际的最坏情况器件参数文件来优化MOS模拟电路的性能,每个参数文件对应一个性能度量。为感兴趣的性能指标构建了非线性响应曲面,并通过求解一组适当的非线性规划问题来确定最坏情况下的设备参数文件。最坏情况下的文件取决于可设计参数的值。在最坏情况设计优化过程中,提出了一种有效的结合这种相关性的方法。这种方法能够设计出具有最佳性能和高参数产率的电路。给出了一些说明性的模拟电路实例来说明最坏情况设计优化程序的应用
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An integrated approach to realistic worst-case design optimization of MOS analog circuits
The authors present a new integrated approach for the optimization of MOS analog circuit performance by using realistic worst-case device parameter files, each corresponding to a performance measure. Nonlinear response surfaces are constructed for the performance measures of interest, and the worst-case device parameter files are identified by solving a set of suitably cast nonlinear programming problems. The worst-case files are shown to depend on the values of the designable parameters. An efficient method of incorporating this dependence during worst-case design optimization has been developed. This method enables the design of circuits with optimal performance and high parametric yields. Some illustrative analog circuit examples are given to demonstrate the application of the worst-case design optimization procedure.<>
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