{"title":"串联MOSFET链的缩放","authors":"S. Vemuru","doi":"10.1109/GLSV.1994.289969","DOIUrl":null,"url":null,"abstract":"Scaling of serially-connected MOSFETs results in reduced propagation delays and power dissipation. Delay formulae and optimum scaling factors are derived as functions of capacitive load, diffusion capacitance and number of MOSFETs in the serially-connected chain using exponential-scaling and linear-scaling methods.<<ETX>>","PeriodicalId":330584,"journal":{"name":"Proceedings of 4th Great Lakes Symposium on VLSI","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Scaling of serially-connected MOSFET chains\",\"authors\":\"S. Vemuru\",\"doi\":\"10.1109/GLSV.1994.289969\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Scaling of serially-connected MOSFETs results in reduced propagation delays and power dissipation. Delay formulae and optimum scaling factors are derived as functions of capacitive load, diffusion capacitance and number of MOSFETs in the serially-connected chain using exponential-scaling and linear-scaling methods.<<ETX>>\",\"PeriodicalId\":330584,\"journal\":{\"name\":\"Proceedings of 4th Great Lakes Symposium on VLSI\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th Great Lakes Symposium on VLSI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GLSV.1994.289969\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th Great Lakes Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GLSV.1994.289969","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Scaling of serially-connected MOSFETs results in reduced propagation delays and power dissipation. Delay formulae and optimum scaling factors are derived as functions of capacitive load, diffusion capacitance and number of MOSFETs in the serially-connected chain using exponential-scaling and linear-scaling methods.<>
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