最坏情况下质子对直接电离SEU速率的贡献

J. Guillermin, N. Sukhaseum, P. Pourrouquet, N. Chatry, F. Bezerra, R. Ecoffet
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引用次数: 6

摘要

在高度整合的记忆中,低能质子可引起单事件扰动。在小于90 nm的技术节点上,已经观察到直接电离现象。单事件扰动率的计算通常在各向同性屏蔽为1g .cm-2的情况下进行。考虑到直接电离,低能质子通量会受到任务所考虑的屏蔽或高度的显著影响。本研究的目的是评估辐射和机械环境对计算在轨速率的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Worst-Case Proton Contribution to the Direct Ionization SEU Rate
Low energy protons can induce Single Event Upsets in highly integrated memories. The direct ionization phenomenon has been observed for technology nodes lower than 90 nm. The Single Event Upset rate calculation is usually performed with an isotropic shielding of 1 g.cm-2. Considering the direct ionization, low energy proton fluxes can be significantly impacted by the shielding or the altitude considered for the mission. The purpose of this study was to assess the impact of the radiative and mechanical environments on the calculated in-orbit rates.
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