快速准确的多级NAND eeprom编程方法

1995 Symposium on VLSI Technology. Digest of Technical Papers Pub Date : 1995-06-06 DOI:10.1109/VLSIT.1995.520891

G. Hemink, T. Tanaka, T. Endoh, S. Aritome, R. Shirota

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引用次数: 76

摘要

要用NAND eeprom代替传统硬盘，需要非常高的密度和很高的编程速度。增加的密度可以通过使用多级存储单元来实现。采用阶梯编程脉冲和逐位验证相结合的新方法，可以获得4级或2位运算所需的极窄的阈值电压分布(0.7 V)和300 /spl mu/s/page或590 ns/byte的高编程速度。

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Fast and accurate programming method for multi-level NAND EEPROMs

For the replacement of conventional hard disks by NAND EEPROMs, a very high density and a high programming speed are required. An increased density can be achieved by using multi-level memory cells. With the new method, using staircase programming pulses combined with a bit-by-bit verify, a very narrow threshold voltage distribution of 0.7 V, necessary for 4-level or 2-bit operation, and a high programming speed of 300 /spl mu/s/page or 590 ns/byte can be obtained.

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来源期刊

1995 Symposium on VLSI Technology. Digest of Technical Papers

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