P. Orlando, K. Groves, A. Mattamana, T. Quach, P. Watson, L. Johnson, P. Wyatt, C. Chen, C. Chen, R. Drangmeister, C. Keast
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X-Band receiver front-end in fully depleted SOI technology
This paper describes a wide band/high dynamic range receiver implemented in a 0.18-μm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The system demonstration is a single conversion architecture with RF input at X-Band and IF output at S-Band. The receiver yielded 20-21.5 dB conversion gain, 5.6-6 dB noise figure, and 16.7 dBm OIP3 across a 600-MHz instantaneous bandwidth at S-Band operation.
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