一种具有自适应单元偏置方案的SRAM核心结构

Hak-soo Yu, Nam-Seog Kim, Young-Jae Son, Yong-geol Kim, Hyo-Chang Kim, Uk-Rae Cho, H. Byun
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引用次数: 6

摘要

本文描述了一种自适应单元偏置方案,该方案旨在实现低功耗、高速度和高密度SRAM内核的高性能和稳定性,同时减少工艺变化。该方案的特点是采用约束-连续单元偏置优化方法,顺序确定最优单元偏置条件,以满足给定SRAM核的速度和稳定性目标。采用自适应单元偏置方案的架构应用于144Mb双堆叠S3 SRAM, SRAM核心性能参数变化减少49%,面积开销减少8%。功率降低21%
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A SRAM Core Architecture with Adaptive Cell Bias Scheme
This paper describes an adaptive cell bias scheme that is proposed to achieve high performance and stability for a low power, high speed, and high density SRAM core with less process variation. The proposed scheme is featured with constrained-successive cell bias optimization method that determines the optimal cell bias condition sequentially to meet both the speed and stability target of a given SRAM core. The architecture with adaptive cell bias scheme is applied to a 144Mb double stacked S3 SRAM and leads to 49% reduction in SRAM core performance parameter variations with 8% area overhead. The power reduction is 21%
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