一种k栅极砷化镓栅极阵列

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/isscc.1984.1156640

Y. Ikawa, N. Toyoda, M. Mochisuki, T. Terada, K. Kanazawa, M. Hirose, T. Mizoguchi, A. Hojo

{"title":"一种k栅极砷化镓栅极阵列","authors":"Y. Ikawa, N. Toyoda, M. Mochisuki, T. Terada, K. Kanazawa, M. Hirose, T. Mizoguchi, A. Hojo","doi":"10.1109/isscc.1984.1156640","DOIUrl":null,"url":null,"abstract":"A 1050-gate GaAs gate array connected as a 6 × 6b parallel multiplier, which exhibits a multiplication time of 10.6ns and 350mW power dissipation, will be covered.","PeriodicalId":260117,"journal":{"name":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"A 1K-gate GaAs gate array\",\"authors\":\"Y. Ikawa, N. Toyoda, M. Mochisuki, T. Terada, K. Kanazawa, M. Hirose, T. Mizoguchi, A. Hojo\",\"doi\":\"10.1109/isscc.1984.1156640\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1050-gate GaAs gate array connected as a 6 × 6b parallel multiplier, which exhibits a multiplication time of 10.6ns and 350mW power dissipation, will be covered.\",\"PeriodicalId\":260117,\"journal\":{\"name\":\"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"110 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/isscc.1984.1156640\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/isscc.1984.1156640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 18

摘要

将介绍一种连接为6 × 6b并联乘法器的1050门GaAs门阵列，其倍增时间为10.6ns，功耗为350mW。

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A 1K-gate GaAs gate array

A 1050-gate GaAs gate array connected as a 6 × 6b parallel multiplier, which exhibits a multiplication time of 10.6ns and 350mW power dissipation, will be covered.

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来源期刊

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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