用于高速串行数据链路的2 - 5gb /s全差分3X过采样CDR

Nathan Kiddinapillai, T. Kwasniewski
{"title":"用于高速串行数据链路的2 - 5gb /s全差分3X过采样CDR","authors":"Nathan Kiddinapillai, T. Kwasniewski","doi":"10.1109/NORCHP.2009.5397815","DOIUrl":null,"url":null,"abstract":"This paper presents the design and implementation of a fully differential 3X oversampling clock and data recovery (CDR) circuit for high-speed serial data link. The CDR is capable of operating at any speed from 2 to 5 Gb/s. The architecture of the CDR replaces the analog VCO and loop filter used in analog PLL based CDR with digital circuits. The CDR uses a digital threshold decision technique to improve the jitter tolerance performance. System level simulation shows that the CDR has a high frequency jitter tolerance of 0.67 UI and acquisition time of 8 baud period. The CDR is implemented in 65 nm CMOS process technology. The post-layout simulation is performed for 27–1 PRBS data. The CDR consumes 39 mW from 1.1 V power supply at 5 Gb/s. The core CDR circuit occupies an area of 0.013mm2.","PeriodicalId":308859,"journal":{"name":"2009 NORCHIP","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 2–5 Gb/s fully differential 3X oversampling CDR for high-speed serial data link\",\"authors\":\"Nathan Kiddinapillai, T. Kwasniewski\",\"doi\":\"10.1109/NORCHP.2009.5397815\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and implementation of a fully differential 3X oversampling clock and data recovery (CDR) circuit for high-speed serial data link. The CDR is capable of operating at any speed from 2 to 5 Gb/s. The architecture of the CDR replaces the analog VCO and loop filter used in analog PLL based CDR with digital circuits. The CDR uses a digital threshold decision technique to improve the jitter tolerance performance. System level simulation shows that the CDR has a high frequency jitter tolerance of 0.67 UI and acquisition time of 8 baud period. The CDR is implemented in 65 nm CMOS process technology. The post-layout simulation is performed for 27–1 PRBS data. The CDR consumes 39 mW from 1.1 V power supply at 5 Gb/s. The core CDR circuit occupies an area of 0.013mm2.\",\"PeriodicalId\":308859,\"journal\":{\"name\":\"2009 NORCHIP\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 NORCHIP\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NORCHP.2009.5397815\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 NORCHIP","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHP.2009.5397815","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

本文介绍了一种高速串行数据链路的全差分3X过采样时钟和数据恢复电路的设计与实现。话单支持2 ~ 5gb /s的任意速率。该CDR的结构用数字电路取代了模拟锁相环CDR中使用的模拟压控振荡器和环路滤波器。CDR采用数字阈值决策技术,提高了系统的抗抖动性能。系统级仿真表明,CDR的高频抖动容限为0.67 UI,采集时间为8波特周期。CDR采用65纳米CMOS工艺技术实现。对27-1 PRBS数据进行布局后仿真。CDR在5gb /s速率下,1.1 V电源消耗39mw。核心CDR电路占地0.013mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 2–5 Gb/s fully differential 3X oversampling CDR for high-speed serial data link
This paper presents the design and implementation of a fully differential 3X oversampling clock and data recovery (CDR) circuit for high-speed serial data link. The CDR is capable of operating at any speed from 2 to 5 Gb/s. The architecture of the CDR replaces the analog VCO and loop filter used in analog PLL based CDR with digital circuits. The CDR uses a digital threshold decision technique to improve the jitter tolerance performance. System level simulation shows that the CDR has a high frequency jitter tolerance of 0.67 UI and acquisition time of 8 baud period. The CDR is implemented in 65 nm CMOS process technology. The post-layout simulation is performed for 27–1 PRBS data. The CDR consumes 39 mW from 1.1 V power supply at 5 Gb/s. The core CDR circuit occupies an area of 0.013mm2.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信