用于非接触式徽章的双源ASIC

Euro ASIC '91 Pub Date : 1991-05-27 DOI:10.1109/EUASIC.1991.212880

R. Petigny, P. Cabon

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引用次数: 0

摘要

介绍了一种用两种不同技术源实现同一电路的身份标识设计。在第一个来源中，CMOS 3 μ m n -井技术的面积为6mm /sup 2/(9300平方密耳)，在第二个来源中，CMOS 2 μ m n -井技术的面积为4mm /sup 2/(6200平方密耳)。电源由一块3v锂电池组成。第二源的设计主要是通过对第一电路GDS2文件的CAD处理来实现的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A double-sourced ASIC for contactless badges

Design of the same circuit with two different technology sources for an identification badge is presented. In the first source, a CMOS 3 mu m N-well technology issued with an area of 6 mm/sup 2/ (9300 sq mils), in the second source, a CMOS 2 mu m N-well technology is used for an area of 4 mm/sup 2/ (6200 sq mils). The power supply consists in a 3 V lithium battery. Design for the second source is mostly realized through CAD processing of the first circuit GDS2 file.<>

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Euro ASIC '91

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