x射线膜掩膜制备用化学放大抗蚀剂的CD可控性

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872620

M. Ezaki, Y. Kikuchi, S. Tsuboi, H. Watanabe, H. Aoyama, Y. Nakayama, S. Ohki, T. Morosawa, T. Matsuda

{"title":"x射线膜掩膜制备用化学放大抗蚀剂的CD可控性","authors":"M. Ezaki, Y. Kikuchi, S. Tsuboi, H. Watanabe, H. Aoyama, Y. Nakayama, S. Ohki, T. Morosawa, T. Matsuda","doi":"10.1109/IMNC.2000.872620","DOIUrl":null,"url":null,"abstract":"E-beam mask writer is an extremely important tool to fabricate the x-ray mask. E-beam writing process is required to have enough placement accuracy and CD controllability for 1X mask. A variable-shaped 100 kV e-beam mask writer EB-X3 has been developed for x-ray membrane mask fabrication and evaluated by using commercially available positive tone resists. We have shown that the high resolution of 50 nm L/S could be obtained for ZEP-520 resists by using the stable 100 kV EB writer. In this study we focus on the chemically amplified (CA) resists for x-ray membrane mask fabrication.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CD controllability of chemically amplified resists for x-ray membrane mask fabrication\",\"authors\":\"M. Ezaki, Y. Kikuchi, S. Tsuboi, H. Watanabe, H. Aoyama, Y. Nakayama, S. Ohki, T. Morosawa, T. Matsuda\",\"doi\":\"10.1109/IMNC.2000.872620\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"E-beam mask writer is an extremely important tool to fabricate the x-ray mask. E-beam writing process is required to have enough placement accuracy and CD controllability for 1X mask. A variable-shaped 100 kV e-beam mask writer EB-X3 has been developed for x-ray membrane mask fabrication and evaluated by using commercially available positive tone resists. We have shown that the high resolution of 50 nm L/S could be obtained for ZEP-520 resists by using the stable 100 kV EB writer. In this study we focus on the chemically amplified (CA) resists for x-ray membrane mask fabrication.\",\"PeriodicalId\":270640,\"journal\":{\"name\":\"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.2000.872620\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2000.872620","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

电子束掩模刻录机是制作x射线掩模的重要工具。对于1X掩模，电子束写入工艺要求具有足够的放置精度和CD可控性。开发了一种可变形状的100 kV电子束掩模编写器EB-X3，用于x射线膜掩模的制作，并通过使用市售的正色调抗蚀剂进行了评估。我们已经证明，使用稳定的100 kV EB写入器可以获得50 nm L/S的高分辨率ZEP-520电阻。在本研究中，我们重点研究了用于x射线膜掩膜制备的化学放大(CA)抗蚀剂。

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CD controllability of chemically amplified resists for x-ray membrane mask fabrication

E-beam mask writer is an extremely important tool to fabricate the x-ray mask. E-beam writing process is required to have enough placement accuracy and CD controllability for 1X mask. A variable-shaped 100 kV e-beam mask writer EB-X3 has been developed for x-ray membrane mask fabrication and evaluated by using commercially available positive tone resists. We have shown that the high resolution of 50 nm L/S could be obtained for ZEP-520 resists by using the stable 100 kV EB writer. In this study we focus on the chemically amplified (CA) resists for x-ray membrane mask fabrication.

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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