具有失配衰减的低温系数曲率补偿带隙基准

Mahitab ElAdwy, S. Ibrahim, M. Dessouky
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引用次数: 1

摘要

提出了一种具有低温度系数的高阶曲率补偿带隙基准。曲率补偿是通过使用Pplus多电阻和Nplus多电阻来维持的,以实现与温度相关的电阻比。采用t型电阻结构,使BGR能够在低电源电压或高MOSFET阈值电压下工作,减少了晶体管和电阻的不匹配。该设计采用65纳米CMOS技术,采用1.8 v电源。输出参考电压为550 mV,在-20°C至80°C的温度范围内显示0.22 ppm/°C的TC。采用高增益运算放大器,将电源抑制比提高到直流时的-117.8 dB和1khz时的-75 dB。错配效应为4.3%。BGR实现了0.8 mV/V的线路调节,总功耗为20.8 μW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A low-temperature-coefficient curvature-compensated bandgap reference with mismatch attenuation
A high-order curvature-compensated bandgap reference (BGR) with low temperature coefficient (TC) is proposed in this paper. The curvature compensation is maintained through the use of Pplus poly resistor and Nplus poly resistor to achieve temperature-dependent resistor ratios. A T-resistor structure is adopted which enables the BGR to work under low supply voltage or high MOSFET threshold voltage and to reduce the mismatches in transistors and resistors. The design is implemented in 65-nm CMOS technology with a 1.8-V supply. The output reference voltage is 550 mV and shows a TC of 0.22 ppm/°C in a temperature range from -20 °C to 80 °C. A high gain operational amplifier is used that enhances the power supply rejection ratio to -117.8 dB at DC and -75 dB at 1 kHz. The effect of mismatch is 4.3%. The proposed BGR achieves a line regulation of 0.8 mV/V and total power consumption of 20.8 μW.
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