S. Verma, G. Bersuker, D. Gilmer, A. Padovani, H. Park, A. Nainani, D. Heh, Jeff Huang, Jack Jiang, K. Parat, P. Kirsch, L. Larcher, H. Tseng, K. Saraswat, R. Jammy
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引用次数: 10
摘要
我们首次展示了含氟带工程(BE)隧道氧化物(sio2 /HfSiO/ sio2) TANOS具有优异的程序/擦除(P/E)特性和105次循环的耐久性。在隧道电介质中加入氟改善了Si/ sio2界面，从而获得了在3 V P/E窗口上几乎恒定的优异耐久性，至少105次循环。氟也减少界面状态的产生约20%的保留。此外，氟钝化体阱导致高达10倍的击穿电荷(qbd)和~10-50倍的界面态密度(Dit)降低。BE-TANOS的氟钝化非常重要，因为它提高了可靠性，有助于实现超过20 nm节点的TANOS闪存NVM。
A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase & Endurance to 10^5 Cycles
We demonstrate for the first time a fluorine incorporated band- engineered (BE) tunnel oxide (SiO 2 /HfSiO/SiO 2 ) TANOS with excellent program / erase (P/E) characteristics and endurance to 10 5 cycles. Incorporating fluorine in the tunnel dielectric improves Si/SiO 2 interface resulting in excellent endurance of nearly constant over 3 V P/E window for at least 10 5 cycles. Fluorine also reduces interface state generation during retention by ~20%. Furthermore, Fluorine passivates bulk traps leading to as much as ~10times higher charge to breakdown (Q bd ) and ~10-50times lower interface state density (Dit). Fluorine passivation for BE-TANOS is significant because it improves reliability assisting implementation of TANOS flash NVM beyond the 20 nm node.
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