35ghz差分分布式损耗补偿放大器

J. Buckwalter
{"title":"35ghz差分分布式损耗补偿放大器","authors":"J. Buckwalter","doi":"10.1109/RFIC.2008.4561420","DOIUrl":null,"url":null,"abstract":"The demand for 40+ Gb/s broadband drivers and equalizers for electrical and optical links compels the use of distributed circuit techniques and on-chip loss compensation. A distributed loss-compensation scheme is presented for synthetic transmission lines. The distributed loss-compensated amplifier is implemented in a 120 nm BiCMOS process using only NMOS devices. A 3 dB bandwidth of 35 GHz is measured with gain ripple of +/-1 dB while consuming only 18 mW.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 35-GHz differential distributed loss-compensation amplifier\",\"authors\":\"J. Buckwalter\",\"doi\":\"10.1109/RFIC.2008.4561420\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The demand for 40+ Gb/s broadband drivers and equalizers for electrical and optical links compels the use of distributed circuit techniques and on-chip loss compensation. A distributed loss-compensation scheme is presented for synthetic transmission lines. The distributed loss-compensated amplifier is implemented in a 120 nm BiCMOS process using only NMOS devices. A 3 dB bandwidth of 35 GHz is measured with gain ripple of +/-1 dB while consuming only 18 mW.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561420\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561420","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

对40+ Gb/s宽带驱动和均衡器的需求迫使使用分布式电路技术和片上损耗补偿。提出了一种适用于综合输电线路的分布式损耗补偿方案。分布式损耗补偿放大器在120 nm BiCMOS工艺中实现,仅使用NMOS器件。35ghz的3db带宽测量,增益纹波为+/-1 dB,而功耗仅为18mw。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 35-GHz differential distributed loss-compensation amplifier
The demand for 40+ Gb/s broadband drivers and equalizers for electrical and optical links compels the use of distributed circuit techniques and on-chip loss compensation. A distributed loss-compensation scheme is presented for synthetic transmission lines. The distributed loss-compensated amplifier is implemented in a 120 nm BiCMOS process using only NMOS devices. A 3 dB bandwidth of 35 GHz is measured with gain ripple of +/-1 dB while consuming only 18 mW.
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