用于光子器件的应变补偿MBE生长AlGaInAs/AlGaInAs/InP量子阱

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492310

H. Hillmer, R. Losch, W. Schlapp, F. Steinhagen, H. Burkhard

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引用次数: 0

摘要

采用MBE生长了具有压缩应变孔和拉伸应变势垒的应变补偿QW样品，并用低温光致发光对其进行了研究。PL线宽较窄，随井宽的增加而减小，随井数的增加而微弱增加。

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Strain-compensated MBE grown AlGaInAs/AlGaInAs/InP QWs for photonic devices

Strain compensated QW samples with compressively strained wells and tensile strained barriers have been grown by MBE and studied by low temperature photoluminescence. The PL linewidths are narrow, decrease with growing well widths, and increase only weakly with rising number of wells.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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