基于异质结构技术的高速栅极设计

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.838794

Z. Tchakhnakia, I. Sikmashvili, G. D. Didebashvili, R. Melkadze

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引用次数: 0

摘要

介绍了基于AlGaAs/GaAs异质结构的BFL栅极数字集成电路设计技术。对高电子迁移率晶体管(HEMT)进行了仿真，定义了其异质结构的基本结构和电物理参数。在MBE制造的AlGaAs/GaAs异质结构上的HEMT(栅极长度为0.8 /spl mu/m)实验样品与模拟晶体管的结果吻合较好，误差不超过10%。

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Design of high-speed gates based on heterostructural technology

The design technique of digital integrated circuits on BFL gates is represented on the basis of an AlGaAs/GaAs heterostructure. The high electron mobility transistor (HEMT) is simulated and the basic architecture and electrophysical parameters of the heterostructure are defined. Experimental samples of the HEMT (with gate length 0.8 /spl mu/m) on AlGaAs/GaAs heterostructures, manufactured by MBE, are in good agreement with the simulated transistor and the discrepancy does not exceed 10%.

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来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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