Yui Takata, Y. Muroya, T. Kozawa, S. Enomoto, B. Naqvi, D. De Simone
{"title":"EUV光刻用sn络合侧链聚合物的反应机理及EB图化评价","authors":"Yui Takata, Y. Muroya, T. Kozawa, S. Enomoto, B. Naqvi, D. De Simone","doi":"10.1117/12.2670173","DOIUrl":null,"url":null,"abstract":"Since 2019, the extreme ultraviolet lithography (EUVL) has been applied to the high-volume production of devices. For further scaling, high-numerical aperture (NA) tool and resist materials applicable to high-NA EUVL are required. However, there are no resists applicable to high-NA EUVL. These days, resist materials containing Sn whose EUV absorption cross section is particularly high are attracting much attention. In this research, radiation-induced reaction mechanisms of Sncomplex- side-chain polymers were investigated to obtain the guidelines of material design.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reaction mechanisms and EB patterning evaluation of Sn-complex-side-chain polymer used for EUV lithography\",\"authors\":\"Yui Takata, Y. Muroya, T. Kozawa, S. Enomoto, B. Naqvi, D. De Simone\",\"doi\":\"10.1117/12.2670173\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Since 2019, the extreme ultraviolet lithography (EUVL) has been applied to the high-volume production of devices. For further scaling, high-numerical aperture (NA) tool and resist materials applicable to high-NA EUVL are required. However, there are no resists applicable to high-NA EUVL. These days, resist materials containing Sn whose EUV absorption cross section is particularly high are attracting much attention. In this research, radiation-induced reaction mechanisms of Sncomplex- side-chain polymers were investigated to obtain the guidelines of material design.\",\"PeriodicalId\":212235,\"journal\":{\"name\":\"Advanced Lithography\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Lithography\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2670173\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2670173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reaction mechanisms and EB patterning evaluation of Sn-complex-side-chain polymer used for EUV lithography
Since 2019, the extreme ultraviolet lithography (EUVL) has been applied to the high-volume production of devices. For further scaling, high-numerical aperture (NA) tool and resist materials applicable to high-NA EUVL are required. However, there are no resists applicable to high-NA EUVL. These days, resist materials containing Sn whose EUV absorption cross section is particularly high are attracting much attention. In this research, radiation-induced reaction mechanisms of Sncomplex- side-chain polymers were investigated to obtain the guidelines of material design.
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